Read Architectures for Multi-bit per cell NAND Flash Memories

Read Architectures for Multi-bit per cell NAND Flash Memories published by Forward Insights in September, 2009. This report consists of 36 Pages and the price starts from US $ 2999.

Introduction

Abstract

This report explores the theory, circuit elements, timings, and key design features of the conventional interleaved architecture versus the all bitline sensing architecture.

Table of Contents

• CONTENTS
• LIST OF FIGURES
• EXECUTIVE SUMMARY
• INTRODUCTION
• NAND FLASH READ ARCHITECTURES
  • Conventional Read Architecture
    • Latch design
  • All Bitline Sensing (ABL) Architecture
    • Sensing Design
  • ABL Sensing vs. Conventional Read
    • Summary

• REFERENCES
• ABOUT THE AUTHOR
• ABOUT FORWARD INSIGHTS
  • Services
  • Contact
• REPORT OFFERINGS

List of Figures

• Figure 1. NAND Architecture
• Figure 3. Conventional Read: Essential Elements of the Page Buffer
• Figure 4. Conventional Read Timing
• Figure 5. Conventional Read Latches
• Figure 6. Conventional Read: Latch characteristic for appropriate sizing
• Figure 7. ABL sensing: Essential Elements of the Page Buffer
• Figure 9. ABL sensing: the sense
• Figure 10 Evaluation Time
• Figure 11. Contributors to Parasitic Capacitance (Bitline cross-section)
• Figure 12 Three adjacent bitlines and the effect of capacitive coupling between them
• Figure 13 Yupin Effect
• Figure 14. Cell working points
• Figure 17 Programming Time for 2-bit/cell NAND Flash Memory
• Figure 19 Energy Savings
• Figure 20 3-bit/cell ABL Programming

List of Tables

• Table 1. ABL vs. Conventional Read Architecture

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