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Market Research Report

The World Market for Silicon Carbide & Gallium Nitride Power Semiconductors - 2010 Edition

Published by IMS Research
Published January, 2010 Product code 113165
Content info 215 PAGES (including 56 tables and 84 figures)
Price
US $ 6290 PDF by E-mail (Single User License)
US $ 7550 PDF by E-mail (Site License)
US $ 9440 PDF by E-mail (Divisional License)


The World Market for Silicon Carbide & Gallium Nitride Power Semiconductors - 2010 Edition published by IMS Research in January, 2010. This report consists of 215 PAGES (including 56 tables and 84 figures) and the price starts from US $ 6290.

Introduction

Abstract

Summary:

The report provides an in-depth global assessment on the SiC & GaN power semiconductor market. The report is designed to provide users with the likely developments and penetration rates for SiC & GaN power semiconductors in key applications. The report also contains an end-user survey with CTOs and chief engineers within the largest companies who will choose whether these new device technologies are used.

Some of the key findings are:

  • The SiC & GaN power semiconductor market is not anticipated to make a substantial impact onto the power semiconductor industry until 2013, projected to be worth over $150 million.
  • The market for SiC & GaN power devices is forecast to reach $2.8 billion by 2019.
  • Hybrid and electric vehicles hold the greatest revenue opportunity for SiC power devices
  • 57% of OEMs surveyed said they are already or would be using SiC in their designs.

Feature of this report include:

  • SiC & GaN power device market sizes for 2009 with conservative, mid-case and optimistic case forecasts to 2019.
  • Detailed revenue, unit shipment and average selling price analysis for both SiC & GaN power devices.
  • SiC & GaN power device forecast by key applications, with penetration rates for each product type.
  • SiC & GaN power device pricing points from 2009 to 2019, collected from power semiconductor suppliers and end users.
  • Comprehensive end-user survey, containing key findings from over 30 hours of consultation.

Table of Contents

Chapter 1 - Introduction, Scope and Methodology

Chapter 2 - Silicon Carbide & Gallium Nitride Technology and Pricing Analysis

  • 2.1 Silicon Carbide Technology
  • 2.2 Gallium Nitride Technology
  • 2.3 SiC & GaN Pricing Trend Analysis

Chapter 3 - World Market for SiC & GaN Power Semiconductors by Key Applications

  • 3.0 Introduction
  • 3.1 World Market for SiC & GaN Power Semiconductors
  • 3.2 World Market for SiC & GaN Power Semiconductors by PFC Power Supplies
  • 3.3 World Market for SiC & GaN Power Semiconductors by UPS
  • 3.4 World Market for SiC & GaN Power Semiconductors by Hybrid & Electric Vehicles
  • 3.5 World Market for SiC & GaN Power Semiconductors by Industrial Motor Drives
  • 3.6 World Market for SiC & GaN Power Semiconductors by PV Inverters
  • 3.7 World Market for SiC & GaN Power Semiconductors by Wind Turbines
  • 3.8 World Market for SiC & GaN Power Semiconductors by Other Applications
  • 3.9 World Market for SiC & GaN Power Semiconductors by Voltage Ratings

Chapter 4 - End Application Survey & Key Findings

  • 4.1 Company Types
  • 4.2 Questions

Chapter 5 - Company Profiles

*Full table of contents can be obtained upon the request of sample pages.

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