Existing photovoltaic (PV) metallization techniques are far from optimal across the three incumbent technologies - crystalline silicon (x-Si), copper indium gallium (di)selenide (CIGS), and cadmium telluride (CdTe) - resulting in efficiency loss, high cost of metallization materials, and low yields. With the push for cost reductions across the entire PV value chain, optimization is needed. This report covers innovations in metallization techniques which address the key metallization issues.
Table of Contents
Table of Contents
Metallization Pastes and Inks are the Most Process Critical and Expensive Materials in Cell Production besides the Wafer Itself
Current Metallization Techniques for x-Si, CIGS, and CdTe Technologies
Conventional x-Si cell Front and Back Metallization Does the Job but Remains Suboptimal
Copper Indium Gallium (di)Selenide Utilizes Sputtering and Screen Printing for Metallization
Copper Back Contact Diffusion is a Key Issue in CdTe Metallization
Across the PV Industry, Metallization Techniques are being Optimized to Reduce Production Costs and Improve Margins
Advanced Front-Contact Metallization for Crystalline Silicon Photovoltaic Cells
Copper Metallization will Enable Cheaper Production Costs and Low Temperature Cell Processing
Electrically Conductive Adhesives and Backsheets will Enable Module Integration without Soldering
Advanced Front-Contact Metallization for CIGS Photovoltaic Cells
Copper Diffusion from Back Contact Remains a Challenge for CdTe PV Manufacturers and Researchers
About Lux Research
Key Issues and Innovations in Photovoltaic Metallization published by Lux Research in June 27, 2012. This report consists of Pages: 30 and the price starts from US $ 3500.
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