This research study on the Gallium Nitride (GaN) semiconductors market gives a detailed overview of the global GaN semiconductors market in the present scenario, and discusses the history, evolution, market by technology (substrate & epitaxy materials and transistor technologies), market by products and devices, market by application segments, and by geography. Each classification done for the global GaN semiconductors market has an extensive segmentation with market estimates and forecasts till 2022 for each sub-market in terms of both - revenue and volume. The major GaN semiconductor products - namely the power semiconductors and optosemiconductors are analyzed in great detail throughout the research study in every type of classification.
GaN has turned out to be the choice for most of the power semiconductor applications and is quickly replacing the existing silicon technology. The various properties of GaN such as wider bandgap, high break-down voltage, larger critical electric field, and higher thermal conductivity let the GaN devices operate at higher voltages, high switching frequencies, handle higher power density, and offer enhanced power efficiency than the pure Si devices. These properties allow the GaN discretes like Schottky diodes, MOSFETs, and the other advanced transistors to operate at much higher voltage levels, which are difficult for the counterpart Si devices. GaN power semiconductors also help in reducing the conduction and switching losses, thereby offering higher efficiency in electronic systems. The major application segments of GaN power semiconductors currently are the inverters (& converters), RF devices, power supply modules, and motor drives being used across all the end user verticals.
In the aspect of opto-semiconductors, GaN has been increasingly used in LEDs, laser diodes, and optocouplers due to the primary characteristic of GaN showing much brighter emission characteristics than the other materials such as Si, SiC, GaAs, and GaP. AlGaN, mixed with GaN, is used in opto-semiconductors designed for high-brightness and ultra-high brightness applications that operate at wavelengths <400 nm. This market is expected to have healthy demand due to the markets growing for green, blue, violet, purple, ultra-violet, and white LEDs. The growing market for solid state lighting applications in several areas of the Consumer Electronics, Computers, Automotive, Industrial and Military, Aerospace & Defense sectors is expected to boost the GaN opto-semiconductors market revenue over the years to come.
This report, based on the extensive research on the Gallium Nitride market and industry, is aimed at identifying the entire market for the GaN semiconductor devices, and all its sub-segments through extensively detailed classifications, in terms of both - revenue and shipments. This report is focused on giving a bird's eye-view of the upcoming industry with regards to GaN semiconductor market with detailed market segmentations; combined with qualitative analysis at each and every aspect of the classifications done, i.e. by form factor, design architecture, substrate technology, technology (process) node, products, devices, applications, and geography.
A complete competitive landscape of the current market is analyzed by the market share analysis and rankings of the current key players and all the other details of the key players are discussed in their company profiles. The competitive information in this report includes market shares of leading GaN manufacturers, key developments, and core strategies deployed to win the race, along with mergers & acquisitions, new product developments, collaborations, and JVs of key manufacturers along with company profiles of wafer and wafer equipment manufacturers.
Gallium Nitride market report also analyzes the entire market by discussing the market dynamics such as its growth influencing factors, drivers, restraints, opportunities, burning issues, winning imperatives, porter's five forces and other market trends. The GaN industry's supply chain has been discussed and analyzed thoroughly, with emphasis on dynamics of both - upstream & downstream sectors, their processes and trends, front-end & back-end processes. The complete market value chain and the industry segments have been entailed, with analysis of the strengths & weaknesses of various industry segments. Lastly, a complete market roadmap for the GaN semiconductors market from its birth, till the last forecast year - 2022, is illustrated to give an insight into the total growth and development of the market over the timeline.
The scope of this report includes only the market for semiconductor devices manufactured using Gallium Nitride, as their epitaxy or substrate material. Thus, it only comprises the market for core discrete devices (diodes & transistors) and ICs. The market statistics of more complex and typically used electronic devices such as modules, packages, electronic equipments, and the other similar devices are not included in any way in the market statistics mentioned in this report. The complete market viewed and analyzed in this report is only for GaN semiconductor devices in all the aspects and chapters.
Gallium Nitride market statistics with regards to revenue and volume mentioned throughout this report do not cover the aspects related to gallium raw material, wafers, dies or any other intermediate stage of the several industry processes in the supply chain. An illustrative diagram of the GaN semiconductors monetary chain, showing the clear view of the market considered and analyzed in this report for quantitative data and statistics is given in the report.
In this report, the global GaN semiconductors market and industry is fully segmented into the following categories and aspects:
It is well-known that the basic semiconductor material upon which the two gigantic inter-related sectors; namely, Semiconductors and Electronics lay their foundations is "silicon (Si)" primarily extracted from "silica (silica sand)". As research scientists and engineers conducted several experiments and carried out extensive research searching for an alternative substrate material in the place of silicon, several new substrate materials such as SiC (Silicon Carbide), SiGe (Silicon Germanium), GaAs (Gallium Arsenide), GaN (Gallium Nitride), Indium Gallium Phosphide (InGaP), and so on were discovered to exhibit similar and more favorable (application wise) properties as compared to pure silicon. Subsequently, during the past decade, GaN material production began on a commercial scale and semiconductor products, devices, and system manufacturers started developing GaN-based semiconductor and electronic devices. GaN was found to have 100 times brighter emission than other materials when used in LEDs and other opto-semiconductor devices, hence GaN was first deployed in the opto semiconductor market.
In the optosemiconductors segment, the first commercial large-scale production of GaN LEDs started in around 2001 when successful processes for using GaN as an epitaxy over silicon and sapphire substrates were developed. Since then, GaN has penetrated deep into the high-brightness and ultra-high brightness LED and lighting industry; with the industry leaders such as Nichia Corporation (U.S.) and OSRAM AG (Germany) launching new GaN opto-semiconductors every year. Most of today's blue, UV and white LEDs, and similar laser diodes that offer high light intensity and brightness emissions comprise GaN material.
The penetration of GaN was the first in opto-semiconductors in 2001, followed by power semiconductors (merging both, pure-power & RF-power semiconductors) in 2007. Commercialization of GaN power semiconductors (discretes & ICs) started at a medium scale in 2008. While the penetration growth rate is healthy and substantial in opto-semiconductors, the penetration rate in power semiconductors is explosive. One of the prime reasons for this is the growing application areas in the medium-voltage (200 to 1 KV) ranges, where GaN offers unique and unbeatable power efficiency over pure silicon. Another reason is the superior capability offered by GaN to handle high switching frequencies (>1 GHz), particularly for RF-power functions such as power amplification & switching in RF devices.
In power semiconductors, several transistors and diodes (& rectifiers) have been in the market since 2008, with extraordinary growth in the volume of power discretes (HEMTs, Diodes & Rectifiers and FETs) boosting the total revenue of the SiC power semiconductors market. Another factor for revenue growth was from GaN power ICs, where new power ICs such as MMICs and RFICs were launched commercially every year by industry players after extensive R&D efforts on developing new technologies to enable the same. The complete GaN power semiconductors industry has shifted to a mass-production scenario in 2011 with the success and revenue potential drawing the focus of several power semiconductor market giants.
GaN has turned out to be the choice for most of the power semiconductor applications and is quickly replacing the existing silicon technology. The various properties of GaN such as wider band gap, high break-down voltage, larger critical electric field, and higher thermal conductivity let the GaN devices operate at higher voltages, high switching frequencies, handle higher power density, and offer enhanced power efficiency than the pure Si devices. These properties allow the GaN discretes like Schottky diodes, MOSFETs, and the other advanced transistors to operate at much higher voltage levels, which are difficult for the counterpart Si devices. GaN power semiconductors also help in reducing the conduction and switching losses, thereby offering higher efficiency in electronic systems. The major application segments of GaN power semiconductors currently are the inverters (& converters), RF devices, power supply modules and motor drives being used across all the end user verticals.
In 2008, one of the market leaders of GaN power semiconductors, i.e. Triquint Semiconductor Incorporated (U.S.) offered the first GaN power device to the power semiconductors industry for RF-power applications. RF power industry players have set their eyes on developing several GaN power discretes and ICs customized with application specificity according to the desired features in several RF applications. GaN promises prosperous future in medium-voltage range RF applications. One of the major restraints in the growth of GaN devices is that the GaN devices are not suitable to operate at temperatures above 1000°C. Even at high temperatures exceeding 700°C, GaN power devices are observed to have reduced power handling capability, with droop in power-efficiency. To counter this, the industry has emerged with a solution of using SiC, an inherent radiation and high-temperature resistant tough material as the substrate in the semiconductor devices, thereby showing promising revenue for power devices with GaN-on-SiC structure.
The overall Gallium Nitride market revenue (including both, power and opto segments) stood at $240 million in 2011 globally, which is expected to cross $350 million by the end of 2012. The total revenue in 2022 is forecasted to cross $2.6 billion, at a CAGR of 21.92% from 2012 to 2022, over the time-span of ten years. Among the application sectors, the largest shares are occupied by the Consumer Electronics sector (due to LEDs and lighting), ICT (due to RF), and Industrial, Power, Solar & Wind Sector (due to power applications), together grabbing roughly 70% of the market currently with numerous upcoming applications such as consumer lighting, RF amplifiers, RF switching devices, power factor correction systems, power distribution systems, smart grid, HVDC, industrial motor drives, solar panels, photovoltaic inverters, wind power systems, and so on. The fast growing and upcoming application sectors are automotive and military, defense & aerospace sectors, with upcoming application fields such as electric & hybrid electric vehicles (HEVs) in the former and electronic warfare, radar communication electronics in the latter.
Given below is an illustrative representation of the percentage split-up of the major application sectors in the global GaN semiconductors market in 2011 and the expected scenario in 2022.
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