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Home > Market Research Report > Electronic Components > Semiconductor Manufacturing & Equipment > Infineon (G1 and G2) vs. Cree 6Amp and STMicroelectronics 10Amp SiC Schottky Diodes Teardown and Technology Analysis
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Market Research Report

Infineon (G1 and G2) vs. Cree 6Amp and STMicroelectronics 10Amp SiC Schottky Diodes Teardown and Technology Analysis

Published by MuAnalysis
Published December, 2009 Product code 105126
Content info  
Price
US $ 2800 PDF by E-mail (Single User License)
US $ 3275 PDF by E-mail (Multi-user, single site license price
US $ 4200 PDF by E-mail (Multi-user, multi-site license price)


Infineon (G1 and G2) vs. Cree 6Amp and STMicroelectronics 10Amp SiC Schottky Diodes Teardown and Technology Analysis published by MuAnalysis in December, 2009. This report price starts from US $ 2800.

Introduction

Table of Contents

  • 1. Product Identification
  • 2. External appearance and Principal Dimensions
  • 3. Package
    • Encapsulation
    • Leadframe structure and material
    • Die attach
    • Wirebonding
  • 4. Semiconductor Die
    • Dimensions, Thickness, Die photo
    • Materials and Structure
    • Substrate/epi-layer
    • Schottky contact
    • Passivation
    • Edge structure
    • Back contact
  • 5. Electronic Structure
    • OBIC Analysis
    • Raman Spectroscopy
  • 6. Summary
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