Abstract
The size of sapphire substrates is increasing to response to the current trend
toward the low LED price, but it is actually hard to grow sapphire single
crystals to a large size. For this reason, research on adopting silicon that
has commonly used in the semi-conductor process to the LED manufacturing
process instead of sapphire wafer has recently boomed in recent years.
Silicon substrates, as low-cost, large-sized substrates, have a lot of
advantages over sapphire substrates typically used for nitride-based LEDs in
terms of thermal conductivity, electric conductivity, and high processability.
Nevertheless, they have not reached the commercialization stage yet, for the
reasons that it is hard to control cracks generated by a wide difference in
thermal expansion coefficients between silicon and GaN materials, and the
energy band of Si substrates is opaque, causing a large optical loss.
There has been considerable progress in its performance, however, as it came
possible to control the cracks caused by the difference in thermal expansion
coefficients to a certain degree with the recent development of epitaxial
technologies. In addition, the light loss issue caused by Si substrates
themselves is considerably resolved by using the wafer bonding process using
second substrates. Recently Korean companies such as Samsung and LG as well as
leading companies such as Phillips, and OSRAM in the LED industry are recently
showing aggressive research activities.
In this circumstance, SNE Research has published a report analyzing key
parents related to GaN-On-Si (Gallium Nitride on Silicon) technologies. This
report covers Korean, U.S., Japanese, European, and PCT patents that have
published until March 3, 2012; qualitative in-depth analysis of total 195
effective patents selected is provided.
In relation to the market expansion of GaN devices, technology development on
GaN-On-Si becomes active. The report provides the analysis of patenting trend
on the GaN-On-Si related technology by year/technology/assignee and technology
flow charts of the key technologies, which is expected to be very helpful to
look into the technology development trend and key patents in the field of
GaN-On-Si.
The in-depth key patent analysis provided by the report is focused on the U.S.
patent, covering the current status of key patents, analysis of key patent
trends, and technology flow charts. The conclusion part is composed of the
result of the overall patenting trend (summary), and the key technology trend
of major companies, patent issues, and implications. In addition, patent
summaries of the 97 patents (KR, US, JP, EP, and PCT) are attached.
The report features
- Anaysis of global major patents (195 cases), and 97 key patent summaries
in 109 pates in total
- Analysis of the overall patenting trend, key patent trends, and patent
issues.
- Technology development maps on major GaN on Si technologies
Table of Contents
1. Overview of patent analysis
- Background
- Patent analysis scope
2. Technical overview and industrial trend
- Technical overview
- Development trend
3. Patenting trend analysis
- Patent analysis scope and technology classification system
- Patent search result
- Patenting trend l by year/county
- Patenting trend l by year/technology
- Patenting trend l by year/ assignee(TOP 10)
- Patenting trend l by country/assignee(more than two cases)
- Patenting trend l by country/assignee (one case)
4. Overview of key patent analysis
- Key patent selection and current status
- Key parent list by country
- In-depth key patent analysis method
5. Analysis of Key Patents on Al-containing buffer layers
- Current status of key patent
- Key patent trend analysis
- Technology development chart
6. Analysis of Key Patents on multi-layer buffer layers
- Current status of key patent
- Key patent trend analysis
- Technology development chart
7. Analysis of Key Patents on other buffer layers (1)
- Current status of key patent
- Key patent trend analysis
- Technology development chart
8. Analysis of Key Patents on other buffer layers (2)
- Current status of key patent
- Key patent trend analysis
- Technology development chart
9. Analysis of Key Patents on substrate patterning
- Current status of key patents and trend analysis
10. Conclusions/implications
- Result of patenting trend analysis
- Key technology trend of major companies
- Patent network of major companies
- Patent issues
- Conclusions/implications
11. Patent summary
GaN-On-Si Key Patent Analysis published by SNE Research in July 9, 2012. This report consists of 110 Pages and the price starts from US $ 4250.
