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Mitsubishi 6th gen CSTBT 1200V CM450DY-24S IGBT Power Module Reverse Costing Analysis

Physical Analysis of the Device

Step by Step Reconstruction of the Process Flow

Cost of Manufacturing & Estimation of Selling Price

System Plus Consulting is pleased to publish a reverse costing report on the 6th generation of CSTBT power IGBT from MITSUBISHI. Discover the first IGBT with 2 metals for the emitter, with sophisticated impurity profiles for the CS layer and P layer. Based on a complete teardown process, the report provides an estimation of the production cost as well as the selling price of the CSTBT device, a 1200V, 150A IGBT and the CM450DY-24S, 1200V 450A, half-bridge IGBT module.

This report provides a reverse costing of the POWER TRANSISTOR and POWER MODULE with:

  • Detailed photos & Material analysis
  • Manufacturing Process Flow
  • In-depth economical analysis
  • Manufacturing cost breakdown
  • Selling price estimation

Table of Contents

Executive Summary


Table of Contents

1. Technology Analysis of the module

  • Power Module Dimensions
  • Power Module Dissassembly
  • Transistors and Diodes
  • Wire bondings
  • Cross-section
  • AlN Substrate

2. Technology Analysis - IGBT Die

  • IBGT Die Dimensions
  • About the cross-sections
  • Die Thickness & Gate Contact
  • IGBT Transistor Cross-section
  • IGBT Transistor Structure
  • Mitsubishi CSTBT 6Th generation
  • Synthesis

3. Technology Analysis - Diode Die

4. Manufacturing Process flow

  • IGBT Process Flow
  • Diode Process Flow
  • AMB Substrate Process Flow
  • Module Process Flow

5. Cost Analysis

  • Economic Analysis Hypotheses
  • 5.1. IGBT
    • Component Summary
    • Wafer Fabrication Unit
    • Back-End 0
    • Yield Summary
    • Unprobed Wafer Cost
    • Die Cost
  • 5.2. Diode
  • 5.3. Module
    • AMB Substrate Cost
    • Module Cost
    • Final Test Cost
    • Component Cost

5. Selling Price Estimation

  • Selling Price Estimation
  • Manufacturer Ratios
  • Manufacturer Price
  • Glossary
  • Contact
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