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The GaN power device industry has probably generated less than $2.5M revenues in 2011, as only 2 companies (IRF & EPC Corp.) are selling products on the open market. However, the overall GaN activity has seen extra revenues as R&D contracts, qualification tests and sampling for qualified customers was extremely buoyant.
At very short term, IRF and EPC will likely remain the two main vendors of GaN power devices on the open market in early 2012. This market is likely to stay below $10M for devices, with the rest being made through R&D sales.
2013 should signal the transition from qualification to production ramp-up for several new entrants.The device market could reach the $50M threshold. In 2014, most of these new entrants will ramp-up their capacity, and by 2015 the availability and adoption of qualified 600V+ GaN devices should see the market grow very quickly, and open doors to non-consumer applications. In 2015, 12-15 players will share the consumption of more than 100,000 x 6" (equiv.) epiwafers.
Beyond that, if GaN is qualified in the EV/HEV sector, GaN device business could top the billion dollar line and the GaN-on-Si substrate market could exceed $300M revenues by 2019. However, it is still unclear how car makers will choose between SiC, GaN or the current Silicon technology. At the substrate end, R&D activities are still quite fragmented between several options involving GaN-on-Sapphire, GaN-on-SiC, GaN-on-GaN, GaN-on-AlN and GaN-on-Silicon. Nevertheless, GaNon-Si is likely to take a dominant position as 6" is now available with more than 7µm thick GaN epi and 8" is under qualification. 8" diameter availability is probably the parameter that will make this technology choice obvious.
It is now obvious that the GaN power world attracts numerous newcomers. We have screened 5 companies positioned on the epiwafer business side and more than 6 GaN device pure-players, aside to another 15 Si-based power firms developing GaN technology.
A new trend is LED players now starting looking at this new business opportunity and wondering how to put in place a strategy of diversification to convert their existing extra LED capacity into power. That represents an "epsilon" today, but we assume it may create some disturbances in the natural and organic expected growth... GaN power electronics past, present and future business is inseparable to the LED industry. Both are linked in technology and market dynamics.
Thus, at the end of the day, we won't talk about LED or Power sectors anymore, but rather about"GaN device industry" as main players could be the same...
Power device makers usually buy polished Silicon wafers, conduct the epi (or buy Si epi-wafers) if needed (FZ thin wafer doesn't require epitaxy) then process the devices. This model is roughly the same for SiC technology. For those who plan to enter in the GaN field, 2 scenarios could occur:
Aixtron, AZZURRO, BeMiTec, Bridgelux, CamGaN Ltd, Diotec, Dow Corning, Dowa Electronics Materials,Enphase, EPC Corp., EpiGaN, Episil, Fairchild, FBH, Freescale, Fuji Electric, Furukawa, GaN Systems,GLO AB, Global foundries, HelioDEL, Hitachi, III-V Lab, IMEC, Infineon, International Rectifier, Intersil,IQE, Kyma, LatticeSemiconductor, LG Electronics, LG Siltron, Lumileds, MicroGaN, Microsemi, Mitsubishi Electric, Nitek Inc., Nitronex, NTT, NXP, OnSemi, Osram, Oxford Instruments, Panasonic, Plessey,Semiconductors, Powdec, Power Integrations, Renesas, Rose Street Lab, Samsung, Sanken Electric, Shimei Semiconductor, Shindengen, Siltronic, Soitec, STMicro, Sumitomo SEI, Texas Instruments,Toshiba, Transluscent, Transphorm, TSMC, Tyndall National Institute, Veeco, Velox, Vishay...
This report provides a complete analysis of the GaN device and substrate industry in the power electronics field along with key market metrics. It provides company involvement as well as technology state-of-the-art. In addition, an extensive review of the possible substrates for GaN is provided, offering the most complete view of the Power GaN industry available to date.
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