Market Research Report
Nanowire-based Devices: Technologies and Global Markets
|Published by||BCC Research||Product code||578142|
|Published||Content info||140 Pages
Delivery time: 1-2 business days
|Nanowire-based Devices: Technologies and Global Markets|
|Published: November 14, 2017||Content info: 140 Pages||
The global market for nanowire-based devices was valued at $1.2 billion in 2016. This market will grow from nearly $1.6 billion in 2017 to around $6.0 billion by 2022 with a compound annual growth rate (CAGR) of 30.6% for the period of 2017-2022.
This report provides an updated review of various types of nanowire-based devices and their fabrication processes, and identifies current and emerging applications for these products.
BCC Research delineates the current market status for nanowire-based devices, defines trends, and presents growth forecasts for the next five years. The nanowire-based device market is analyzed based on the following segments: device category, material, and region. In addition, technological issues, including key events and the latest process developments, are discussed.
More specifically, the market analysis conducted by BCC Research for this report is divided into five sections.
In the first section, an introduction to the topic and a historical review of nanowire-based devices are provided, including an outline of recent events. In this section, current and emerging applications for nanowire-based devices are also identified and grouped according to five main categories (electronics, optoelectronics, energy, medical, and sensors and actuators).
The second section provides a technological review of nanowire-based devices. This section offers a revised and detailed description of fabrication processes for nanowire-based devices; typical materials used to produce nanowires; technological trends in device fabrication; and new and emerging fabrication methods. This section concludes with an analysis of the most important technological developments since 2015, including examples of significant patents recently issued or applied for, as well as highlighting the most active research organizations operating in this field.
The third section entails a global market analysis for nanowire-based devices. Global revenues (sales data in millions of dollars) are presented for each segment (device category, material, and region), with actual data referring to the years 2015 and 2016, and estimates for 2017.
The analysis of current revenues for nanowire-based devices is followed by a detailed presentation of market growth trends, based on industry growth, and industry and regional trends. The third section concludes by providing projected revenues for nanowire-based devices within each segment, together with forecast compound annual growth rates (CAGRs) for the period 2017 through 2022.
In the fourth section of the study, which covers global industry structure, the report offers a list of the leading suppliers of nanowires and nanowire-based devices, together with a description of their products. The analysis includes a description of the geographical distribution of these firms and an evaluation of other key industry players. Detailed company profiles of the top players are also provided.
The fifth and final section includes an analysis of recently issued U.S. patents, with a summary of patents related to nanowire-based devices, materials, fabrication methods, and applications. Patent analysis is performed by region, country, assignee, patent category, device type, and material type.
Margareth Gagliardi has extensive experience in the field of advanced materials, specializing in ceramic formulations, materials processing, and new product development. For more than 20 years, she has held management positions in both manufacturing and R&D within U.S. and European firms producing electronic, mechanical, chemical and structural components. She currently works as a consultant serving a variety of organizations and research institutions. She holds a B.S. in Chemical Engineering and an M.S. in Ceramic Engineering.