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Market Research Report

Breakthrough Innovations in Power Semiconductors

Published by Frost & Sullivan Product code 723008
Published Content info 48 Pages
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Breakthrough Innovations in Power Semiconductors
Published: September 27, 2018 Content info: 48 Pages
Description

SiC and GaN Drive Opportunities in High Power Electronics Applications

Power semiconductors are the fundamental electronic components present in any power electronic device. They have been evolving for 30 years in size and performance. The power semiconductors are capable of acting as a switch or amplify current or voltage which has enabled them to serve diverse applications ranging from logic gates in the computer processors to sound amplifiers. Research and development towards improving the performance parameters of power semiconductors and to determine new semiconductor materials apart from silicon is an on-going process. Power semiconductors are being developed in order to propel the rapid advancements in technology like 5G (5th generation) communication, wireless charging and energy conversion.

This technology and innovation report offers insights on the recent innovations in the power semiconductors. The research scope of this research service focuses mainly on the Wide Band Gap (WBG) semiconductors which are opening up new avenues in power electronics industry as a promising alternative for silicon semiconductors. This research service also offers insights on applications that might evolve in the next 5 to 6 years.

GaN (gallium nitride) and SiC (silicon carbide) are two wide band gap materials which are extensively researched in the power electronics industry as possible replacements for silicon semiconductors. Other innovations in semiconductors which will be important from future perspective would be diamond, gallium oxide and their usage in different applications such as high power electronics, radio frequency, wireless charging and 5G communications. Semiconductors are being instrumental in design of any power electronic circuits, advancements in various power electronics domain has impacted plethora of applications at the component level. Power circuits in datacentres will be benefitted from WBG semiconductors to reduce the power consumption. Wireless charging circuit design can be optimized using the GaN semiconductors such as transistors.

This report covers various WBG technologies and includes the following modules:

  • Technology landscape
  • Applications assessment
  • Factors influencing development and adoption-Key drivers and challenges
  • Global trends and innovation indicators
  • Stakeholder Initiatives and Innovation profiles
  • Breadth of applications impacted
  • Technology and application roadmaps showing the future prospect of Transistors
  • Strategic insights about market and emerging trends
Table of Contents
Product Code: D858

Table of Contents

1.0. EXECUTIVE SUMMARY

  • 1.1. Research Scope
  • 1.2. Research Methodology
  • 1.2. Research Methodology (continued)
  • 1.3. Key Research Findings
  • 1.3. Key Research Findings (continued)

2.0. TECHNOLOGY AND APPLICATION LANDSCAPE ASSESSMENT

  • 2.1. Technological Significance of Power Semiconductors in Today's Power Electronics Industry
  • 2.2. Introduction to Silicon and WBG Technologies
  • 2.3. Differentiation between Silicon and WBG Semiconductors
  • 2.4. Application Diversity of Power Semiconductors

3.0. WBG SEMICONDUCTORS - TRENDS, DRIVERS, CHALLENGES, EMERGING APPLICATIONS, PATENT AND FUNDING SCENARIO

  • 3.1. WBG Semiconductors - Significance of GaN and SiC Semiconductors
  • 3.2. Limitations of Silicon and Circuit Miniaturization are Driving WBG Semiconductors
  • 3.3. Rising Demand for Green Energy and Energy Efficiency Propels the Development of WBG Power Semiconductors
  • 3.4. Challenges Hindering the Adoption of WBG Semiconductors
  • 3.5. Global Trends in WBG Power Semiconductors
  • 3.6. Emerging Applications Employing WBG Semiconductors
  • 3.7. Patent Publication Trends
  • 3.8. Inference from Patent Analysis: Key Focus Areas
  • 3.9. Key Patent Holders Driving Innovation
  • 3.10. Government Funding Scenarios in WBG Semiconductors
  • 3.11. Supply Chain Model for WBG Semiconductors

4.0. INNOVATIONS DRIVING THE DEVELOPMENTS IN WBG POWER SEMICONDUCTORS

  • 4.1. Elimination of Protective Circuitry using SiC MOSFETs
  • 4.2. Unique Technology for Developing Cost-efficient Silicon Carbide Devices
  • 4.3. Novel Substrate Technology for Fabrication of WBGSemiconductors
  • 4.4. Advanced Wafering Technology for Power Semiconductors
  • 4.5. Power Efficient GaN Power Switch Module
  • 4.6. Vertical GaN FETs (Gallium Nitride Field Effect Transistors) for Power Electronic Applications
  • 4.7. Gallium Nitride-based Field Effect Transistor Technology
  • 4.8. Vertical Gallium Oxide Transistor for High Power Applications
  • 4.9. Novel Technique for Fabrication of Gallium Oxide Power Devices
  • 4.10. GaN-on-Diamond Wafer Technology for Development of Power Amplifiers
  • 4.11. Diamond-based Circuits for Energy Saving Applications
  • 4.12. Diamond Substrate Technology for Boosting Gallium Nitride Performance
  • 4.13Novel Diamond Platform for High-power Electronics Applications

5.0. FUTURE GROWTH OPPORTUNITIES AND STRATEGIC PERSPECTIVES

  • 5.1. Future Roadmap for Power Semiconductors
  • 5.2. From the Analyst's Desk: What is the Nature of Competition and Global Adoption Scenario for Power Semiconductors
  • 5.3. From the Analyst's Desk: What are Key Attractive Applications and Future Opportunities for Power Semiconductors?

6.0. INDUSTRY CONTACTS

  • 6.1. Key Contacts
  • Legal Disclaimer
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