Market Research Report
High-k And CVD ALD Metal Precursors Market Size, Share & Trends Analysis Report By Technology (Interconnect, Capacitors, Gates), By Region (North America, Europe, Asia Pacific, Middle East & Africa, Latin America), And Segment Forecasts, 2021 - 2028
|High-k And CVD ALD Metal Precursors Market Size, Share & Trends Analysis Report By Technology (Interconnect, Capacitors, Gates), By Region (North America, Europe, Asia Pacific, Middle East & Africa, Latin America), And Segment Forecasts, 2021 - 2028|
Published: July 29, 2021
Grand View Research, Inc.
Content info: 112 Pages
Delivery time: 2-10 business days
The global high-k and CVD ALD metal precursors market size is projected to reach USD 761.1 million by 2028, registering a CAGR of 6.2% from 2021 to 2028, according to a new report by Grand View Research, Inc. The trend of miniaturization of semiconductor and electronic devices and the need for enhancing their performance is expected to drive the market growth.
Atomic Layer Deposition (ALD) is the subclass of the Chemical Vapor Deposition (CVD) process, which is used to manufacture thin films. The ALD method is used for depositing multi-component thin films by co-injecting precursors, such as Hf and Si, for forming a single-layer homogenous film used in several applications, such as self-aligned patterning, 3D NAND, and FinFET. The ALD process can create metal as well as dielectric films based on the precursor requirements.
Insulator materials with high dielectric constant (k) play a vital role in modern semiconductor devices and are used for insulating gates from channels in transistors and decoupling filter capacitors to protect microcircuits from unwanted noise. They are also used in the capacitors that store memory bits in DRAM. Moreover, high-k and ALD/CVD metal precursors play a crucial role in Very-Large-Scale Integration (VLSI) technology and scaling of semiconductor devices to 10 nm and beyond nodes. High-k insulators are required to maintain the capacitance of smaller semiconductor devices.