Market Research Report
Gallium Nitride (GaN) Semiconductor Devices Market Analysis By Product (GaN Radio Frequency Devices, Opto-semiconductors, Power Semiconductors), By Wafer Size, By Application, By Region, And Segment Forecasts, 2014 - 2025
|Published by||Grand View Research, Inc.||Product code||600872|
|Published||Content info||126 Pages
Delivery time: 1-2 business days
|Gallium Nitride (GaN) Semiconductor Devices Market Analysis By Product (GaN Radio Frequency Devices, Opto-semiconductors, Power Semiconductors), By Wafer Size, By Application, By Region, And Segment Forecasts, 2014 - 2025|
|Published: November 29, 2017||Content info: 126 Pages||
The global gallium nitride (GaN) semiconductor devices market is expected to reach USD 4.37 billion by 2025, according to a new study by Grand View Research, Inc. The growing applications of GaN in a wide variety of semiconductor devices are expected to augment the market growth. Additionally, the rapid technological advancements in performance of GaN-based semiconductors are anticipated to further promote the market growth.
GaN is rapidly replacing the existing silicon technology has become the preferred choice for power semiconductor applications. Various properties, such as high breakdown voltage, wider band gap, large critical electric field, and high thermal conductivity, enable GaN devices to operate at higher voltages, high-power density, and high switching frequencies and to offer improved power efficiency over pure silicon-based devices.
Benefits, such as high-temperature tolerance, thermal conductivity, and power density, offered by GaN-based semiconductors are promoting their application in the defense industry. Moreover, the growing expenditure and investment in the defense sectors of developed as well as developing countries are presumed to further drive the industry growth. Moreover, the growing demand for Internet-of-Things (IoT) is increasing the demand for GaN-based semiconductor devices, due to additional benefits, such as wider bandgap, large electric filed, and high breakdown voltage, offered by them.