Market Research Report
Global RF GaN Market Research Report Forecast to 2023
|Published by||Market Research Future||Product code||894995|
|Published||Content info||104 Pages
Delivery time: 1-2 business days
|Global RF GaN Market Research Report Forecast to 2023|
|Published: July 31, 2019||Content info: 104 Pages||
GaN transistors are increasingly finding application in radio frequency application as they offer optimum solutions for simultaneous high power, high frequency, and high-temperature operation. GaN RF devices are primarily used for enabling wireless infrastructure for cell phones, radio and television broadcasting, MRI machines, radar, space and satellite communications, as well as military communications. The factors driving the growth of the global RF GaN market include increasing adoption of energy & power applications and increased demand for it & telecommunication equipment. Currently, gallium nitride (GaN) has been extensively used in radio frequency (RF) and microwave applications to enhance the performance of various devices. GaN is nearly 10% more efficient than laterally diffused MOSFET (LDMOS) which helps in significant energy savings at power level 600W or more. Furthermore, GaN materials are highly efficient, which allows them to offer superior system reliability. GaN-on-Si devices are used in solid-state RF energy systems as they offer an ideal balance of performance, reliability, and power efficiency with an affordable cost structure at production levels. However, competition from silicon carbide (SiC) devices is a restraint to market players.
In 2017, North America dominated the global market; the regional market was valued at USD 164.6 million and is expected to register a CAGR of 22.0% during the forecast period. However, the market in Asia-Pacific is expected to be the fastest-growing at the highest CAGR of 22.8% during the review period.
The global RF GaN market has been segmented on the basis of material type, application, and region. By material type, the market is segmented into GaN-on-SiC, GaN-on-Silicon and GaN-on-Diamond. Based on application, the market is segmented into IT & telecommunication, military & defense, aerospace, and others.
Based on material type, the GaN-On-SiC segment was the largest at a market value of 246.2 million in 2017; it is projected to register a CAGR of 22.1% during the forecast period. By application, the IT & telecommunication segment accounted for the highest market value of 165.2 million in 2017; the segment is projected to exhibit a CAGR of 23.8% during the review period.
The key players in the global RF GaN market are NXP Semiconductors N.V. (Netherlands), Analog Devices Inc. (US), STMicroelectronics N.V. (Switzerland), Toshiba Corporation (Japan), ROHM Semiconductors (Japan), Cree Inc. (US), Aethercomm Inc. (US), Microchip Technology Incorporated (US), Raytheon Company (US), and Qorvo Inc. (US).
Global RF GaN Market Analysis & Forecast, from 2017 to 2023
North America is expected to lead the global RF GaN market with a CAGR of 22.0% during the forecast period. Europe is projected to be the second-largest market exhibiting a CAGR of 21.0%. The market in the Asia-Pacific is the highest growing market at a 22.8% CAGR. The market in the rest of the world is projected to register a CAGR of 19.7% during the forecast period.