PUBLISHER: Orion Market Research | PRODUCT CODE: 1778454
PUBLISHER: Orion Market Research | PRODUCT CODE: 1778454
Silicon Carbide (SiC) MOSFETs Market Size, Share & Trends Analysis Report by Voltage (≤ 650V, 650V - 1200V, 1200V - 1700V, and >= 1700V), by Application (Electric Vehicles (EVs) & Charging Infrastructure, Renewable Energy (Solar & Wind Power Inverters), Power Supplies & Industrial Applications, Rail & Transportation, Aerospace & Defense, and Others), and by Distribution Channel (Direct Sales, and Distributors & Online Sales) Forecast Period (2025-2035)
Industry Overview
The silicon carbide (SiC) MOSFETs market size is $2.3 billion in 2024 and is anticipated to reach $47.2 billion in 2035, growing at a CAGR of 31.8% during the forecast period (2025-2035). SiC MOSFETs are increasingly gaining popularity owing to electric vehicle efficiency, renewable energy efficiency, industrial drives, aerospace applications, defense systems, and government policy-driven cost reduction for energy efficiency. Additionally, SiC MOSFETs increase the efficiency of solar and wind power, lowering the losses in energy, and high-voltage operation enables utility-scale renewable deployments, which fuels the market growth. For instance, in January 2025, Wolfspeed launched its Gen 4 MOSFET technology platform to facilitate breakthrough performance under actual operating conditions in high-power applications. The scalable platform is supportive of long-term, high-performance, application-optimized product roadmaps for products, enabling hybrid efficiency gains in addition to reduced system cost and development time. The platform is available in 750V, 1200V, and 2300V classes.
Market Dynamics
Technological Advancements
EVs' technological progress is improving power electronics efficiency, minimizing system size, and increasing driving ranges, thus appealing to consumers and fueling market expansion. For instance, in September 2024, STMicroelectronics released a new generation of silicon carbide power technology for future-generation EV traction inverters. The company intends to unveil several SiC technology innovations by 2027, such as the fourth-generation STPOWER silicon carbide MOSFET technology. The technology sets new standards for power efficiency, power density, and ruggedness, particularly optimized for traction inverters. The company plans to deliver further advanced SiC technology innovations up to 2027, supporting future EV traction inverter platforms with increased energy-saving capabilities and increased size.
Utilization of Industrial Applications
The growing use of SiC technology in numerous industries is mainly attributed to its ability to enhance energy efficiency and lower operating expenses. For instance, in May 2024, STMicroelectronics constructed the globe's first integrated silicon carbide factory in Italy. The new 200mm manufacturing plant was constructed in Catania, Italy, for power devices, modules, test, and packaging. The plant included in ST's strategy for completely vertically integrated silicon carbide capabilities, from R&D to manufacturing, from substrate to module, in a single location. The plant will begin production in 2026 and ramp to full capacity by 2033. The investment is anticipated to be approximately 5 billion euros, with backing from Italy's state.
Market Segmentation
Electric Vehicles & Charging Infrastructure Segment to Lead the Market with the Largest Share
The growing use of EVs has increased the demand for SiC MOSFETs that improve efficiency and performance in EV powertrains and charging systems. According to the International Energy Agency (IEA) report, there has been a 35% rise in EV sales in China between January to March 2024, achieving almost 1.9 million units. European sales have topped 5%, with Belgium realizing a 35% rise. In the US, sales totaled approximately 350,000, with sales of PHEVs increasing by 50%. Smaller markets for EVs additionally saw greater sales growth. In 2024, EVs will be approximately 17 million units, up over 20% above 2023 sales and with a share of overall car sales of over one-fifth.
1200V - 1700V: A Key Segment in Market Growth
Silicon Carbide MOSFETs, intended for high-power applications, are more efficient, have reduced switching losses, better thermal conductivity, and a smaller size than conventional silicon-based devices. SiC MOSFETs with 1200V to 1700V voltage levels are used in power electronics for high voltage resistance and efficiency. It is applied in electric vehicles, renewable energy systems, industrial power supplies and equipment, aerospace and defense, power grids, smart grids, data centers, and telecommunications. It enhances energy efficiency, minimizes thermal losses, and facilitates fast-charging stations. It additionally improves power conversion and load balancing in smart grids. SiC MOSFETs are gaining market share as a result of the increased energy efficiency, reduced power losses, and enhanced system performance. For instance, in January 2022, Toshiba introduced two silicon carbide MOSFET modules, MG600Q2YMS3 and MG400V2YMS3, rated at 1200V and 1700V, respectively. The modules are the first to offer these voltage ratings and are designed to be used with silicon IGBT modules. It is designed for smaller, more efficient industrial equipment, such as railway vehicle converters and renewable energy power generation systems.
The global silicon carbide (SiC) MOSFETs market is further divided by geography, including North America (the US and Canada), Asia-Pacific (India, China, Japan, South Korea, Australia and New Zealand, ASEAN Countries, and the Rest of Asia-Pacific), Europe (the UK, Germany, France, Italy, Spain, Russia, and the Rest of Europe), and the Rest of the World (the Middle East & Africa, and Latin America).
Government Investments in SiC Technology in North America
The US government is investing in SiC technology to increase domestic semiconductor production and encourage EV adoption, thus propelling market growth. For instance, in October 2024, according to the Biden-Harris administration, plans to invest up to $750 million in Wolfspeed to fund its new silicon carbide factory in North Carolina. The plant, as part of a $6 billion expansion, created 2,000 new jobs and makes chips used by electric vehicles and innovative technologies more efficient. The US currently makes 70% of the globe's silicon carbide, the investments are aimed at maintaining competitiveness in the face of China's increasing competition.
Asia-Pacific Region Dominates the Market with Major Share
Asia-Pacific holds a significant share, owing to government support and funding, are realizes the strategic significance of semiconductor production in fueling market expansion. For instance, according to the Indian government, in September 2024, India's first silicon carbide production unit in Odisha, with an investment of approximately $74.4 million, will boost Bhubaneswar's industrial scenario. The unit promotes innovative technologies, creates a skilled pool of employees, and caters to industries such as railways, defense, power, transport, aerospace, and renewable energy.
The major companies operating in the global silicon carbide (SiC) MOSFETs market include Infineon Technologies AG, Microchip Technology Inc., Nexperia, ROHM Co., Ltd., and STMicroelectronics International N.V., among others. Market players are leveraging partnerships, collaborations, mergers, and acquisition strategies for business expansion and innovative product development to maintain their market positioning.
Recent Developments