PUBLISHER: QYResearch | PRODUCT CODE: 1862281
PUBLISHER: QYResearch | PRODUCT CODE: 1862281
The global market for SiC Substrates was estimated to be worth US$ 1015 million in 2024 and is forecast to a readjusted size of US$ 2666 million by 2031 with a CAGR of 14.6% during the forecast period 2025-2031.
This report provides a comprehensive assessment of recent tariff adjustments and international strategic countermeasures on SiC Substrates cross-border industrial footprints, capital allocation patterns, regional economic interdependencies, and supply chain reconfigurations.
Silicon carbide (SiC) substrates are the core foundation of third-generation semiconductor materials, grown from silicon carbide single crystals. They feature a wide bandgap (3.26 eV), high critical breakdown field strength (3 MV/cm), and high thermal conductivity (4.9 W/cm*K), making them suitable for high-temperature, high-frequency, and high-power applications. Their primary function is to serve as the physical substrate for SiC power devices (such as MOSFETs and diodes), with functional layers formed through epitaxial growth.
The boom in new energy vehicles: The widespread adoption of 800V high-voltage platforms is driving the penetration rate of silicon carbide main drive inverters from 15% in 2023 to 45% in 2026, with models such as the Xpeng G6 and Zeekr X already featuring them as standard equipment.
Photovoltaic energy storage revolution: Huawei's 200kW string inverter adopts a fully silicon carbide solution, achieving an efficiency of 99.1%, an improvement of 0.8 percentage points over silicon-based IGBTs; CATL's energy storage system incorporates silicon carbide DC/DC converters, reducing volume by 40%.
Strong Policy Support: China offers a 30% procurement subsidy for domestically produced equipment such as crystal growth furnaces and ion implanters; the U.S. CHIPS Act provides funding support for silicon carbide projects (though there is uncertainty regarding the policy beyond 2025).
Technical breakthrough directions
Size upgrade: The cost per wafer for 8-inch substrates is 35% lower than for 6-inch substrates. Companies like Wolfspeed and TianYue Advanced have achieved mass production, but the global average yield rate remains below 50%. Breakthroughs are needed in crystal growth efficiency (reducing the PVT method cycle from 100 hours to 70 hours) and microchannel density (<0.5 cm-2).
Material Innovation:
Liquid Phase Epitaxy (LPE): Tianyue Advanced has increased growth speed by 3 times using LPE, with yield rates approaching international standards.
Heterogeneous Integration: Coherent has developed SiC/GaN heterogeneous integration technology, achieving efficiency breakthroughs exceeding 90% in 5G base stations.
As the "foundational material" of the energy revolution, SiC substrates are transitioning from the technology validation phase to a period of scaled-up production. Despite challenges such as equipment dependency and yield bottlenecks, 8-inch mass production, material innovation, and policy support will drive rapid industry growth. Over the next five years, Chinese manufacturers are expected to leverage cost advantages and capacity expansion to gradually break the monopoly held by Western countries and become a core force in the global SiC supply chain.
This report aims to provide a comprehensive presentation of the global market for SiC Substrates, focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of SiC Substrates by region & country, by Inch, and by Application.
The SiC Substrates market size, estimations, and forecasts are provided in terms of sales volume (K Units) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding SiC Substrates.
Market Segmentation
By Company
Segment by Inch
Segment by Application
By Region
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (value, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of SiC Substrates manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Inch, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of SiC Substrates in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of SiC Substrates in country level. It provides sigmate data by Inch, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.