PUBLISHER: QYResearch | PRODUCT CODE: 1862472
PUBLISHER: QYResearch | PRODUCT CODE: 1862472
The global market for SiC Wafer Laser Cutting Equipment was estimated to be worth US$ 138 million in 2024 and is forecast to a readjusted size of US$ 381 million by 2031 with a CAGR of 15.8% during the forecast period 2025-2031.
This report provides a comprehensive assessment of recent tariff adjustments and international strategic countermeasures on SiC Wafer Laser Cutting Equipment cross-border industrial footprints, capital allocation patterns, regional economic interdependencies, and supply chain reconfigurations.
In 2024, global SiC Wafer Laser Cutting Equipment production reached 242 units, with an average global market price of around US$ 578,000 per unit.
Silicon carbide (SiC) was discovered in 1893 as an industrial abrasive for grinding wheels and automotive brakes. About midway through the 20th century, SiC wafer uses grew to include in LED technology. Since then, it has expanded into numerous semiconductor applications due to its advantageous physical properties. These properties are apparent in its wide range of uses in and outside the semiconductor industry. With Moore's Law appearing to reach it's limit, many companies within the semiconductor industry is looking towards silicon carbide as the semiconductor material of the future.
There are numerous advantages to using silicon carbide over more traditional silicon substrates. One of the major advantages is its hardness. This gives the material many advantages, in high speed, high temperature and/or high voltage applications.
Silicon carbide wafers have high thermal conductivity, which means they can transfer heat from one point to another well. This improves its electrical conductivity and ultimately miniaturization, one of the common goals of switching to SiC wafers.
Silicon carbide substrates also have a low coefficient for thermal expansion. Thermal expansion is the amount and direction a material expands or contracts as it heats up or cools down. The most common explanation is ice, although it behaves opposite of most metals, expanding as it cools and shrinking as it heats up. Silicon carbide's low coefficient for thermal expansion means that it does not change significantly in size or shape as it is heated up or cooled down, which makes it perfect for fitting into small devices and packing more transistors onto a single chip.
SiC has the similar hardness as the diamond. Hence dicing the SiC by diamond blade will produce defects of chipping and crack which will induce the current leakage that can't meet the strict demand of automobile applications.
The scheme of laser cutting silicon carbide is laser modified cutting technology. The principle is to use a laser beam with a high transmission wavelength to focus on the inside of the wafer through a lens, and multiphoton absorption occurs, resulting in a local deformation layer, namely modified layer. The layer is mainly composed of holes, high dislocation density layers and cracks. The modified layer is the starting point of subsequent wafer dicing and cracking. The modified layer can be confined inside the wafer by optimizing the laser and optical path system, and no thermal damage is caused to the surface and bottom of the wafer. Then, use external force to guide the cracks to the surface and bottom of the wafer, separating the wafer into the required size.
Judging from the compound annual growth rate in the past ten years, the demand for packaging and testing equipment in developing countries is more vigorous. Due to the current shortage of chips in the chip market, the packaging and testing industry is seeking capital expansion and actively expanding production capacity. As the penetration rate of silicon carbide devices in new energy vehicles, energy, industry, communications and other fields increases, the market demand for silicon carbide laser cutting.
Compared with the traditional grinding wheel cutting and laser ablation, the laser stealth cutting method has better scribing quality and high scribing efficiency, and can realize irregular-shaped chip dicing, which improves the wafer output rate. These advantages make laser stealth dicing become the mainstream of wafer scribing technology, and even an indispensable technology for MEMS device chip manufacturing.
This report aims to provide a comprehensive presentation of the global market for SiC Wafer Laser Cutting Equipment, focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of SiC Wafer Laser Cutting Equipment by region & country, by Type, and by Application.
The SiC Wafer Laser Cutting Equipment market size, estimations, and forecasts are provided in terms of sales volume (Units) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding SiC Wafer Laser Cutting Equipment.
Market Segmentation
By Company
Segment by Type
Segment by Application
By Region
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (value, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of SiC Wafer Laser Cutting Equipment manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of SiC Wafer Laser Cutting Equipment in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of SiC Wafer Laser Cutting Equipment in country level. It provides sigmate data by Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.