PUBLISHER: QYResearch | PRODUCT CODE: 1872064
PUBLISHER: QYResearch | PRODUCT CODE: 1872064
The global market for SiC MOSFET Chips (Devices) and Module was estimated to be worth US$ 1054 million in 2024 and is forecast to a readjusted size of US$ 6153 million by 2031 with a CAGR of 26.6% during the forecast period 2025-2031.
This report provides a comprehensive assessment of recent tariff adjustments and international strategic countermeasures on SiC MOSFET Chips (Devices) and Module cross-border industrial footprints, capital allocation patterns, regional economic interdependencies, and supply chain reconfigurations.
SiC MOSFET chips, or silicon carbide metal-oxide-semiconductor field-effect transistor chips, are a new type of power semiconductor chip manufactured using silicon carbide (SiC) material. Compared to traditional silicon (Si) materials, SiC has a wide bandgap characteristic (bandgap width of approximately 3.26 eV, while silicon has 1.12 eV), which endows SiC MOSFET chips with a series of superior performance characteristics.
SiC MOSFET devices are complete semiconductor devices composed of SiC MOSFET chips as the core, along with necessary packaging materials, leads, etc. Packaging is critical for SiC MOSFET devices, as it not only provides physical protection for the chip, preventing mechanical damage and moisture corrosion, but also enables electrical connection between the chip and external circuits. Common packaging forms for SiC MOSFET devices include TO-247 and TO-220. Taking the TO-247 packaging as an example, it has excellent heat dissipation performance, enabling rapid dissipation of heat generated during chip operation, ensuring stable device operation in high-temperature environments.
SiC MOSFET modules integrate multiple SiC MOSFET devices and other auxiliary components such as diodes into a single power module through a specific circuit topology. This integrated design offers numerous advantages. On one hand, the optimized circuit connections between devices within the module enable higher power density. For example, in the main drive inverter of new energy vehicles, using SiC MOSFET modules can achieve higher power output within a limited space, contributing to the vehicle's miniaturization and lightweight design. On the other hand, the internal layout and connections of the module are carefully designed to effectively reduce stray inductance, thereby enhancing system stability and reliability. Stray inductance can generate voltage spikes during switching processes, affecting the normal operation of devices. However, SiC MOSFET modules mitigate this impact through rational layout and routing.
The explosive growth of the new energy vehicle industry: The rapid development of the new energy vehicle market is the key driver behind the growth of the SiC MOSFET chip, device, and module markets. As countries worldwide increasingly prioritize energy conservation, emissions reduction, and environmental protection, new energy vehicles have become the mainstream direction for automotive industry development. In particular, the widespread adoption of 800V high-voltage platforms has imposed higher performance requirements on power devices. SiC MOSFETs, with their advantages of low on-resistance, high switching frequency, and high voltage withstand capability, have become the ideal choice for main drive inverters in 800V high-voltage platforms. Main drive inverters using SiC MOSFET modules can increase the range of new energy vehicles by 5%-10% while reducing charging time to 15-20 minutes, significantly enhancing the user experience. For example, Tesla was the first to adopt SiC MOSFET modules in its Model 3 and Model Y vehicles, and many other automakers have since followed suit, driving rapid growth in demand for SiC MOSFETs across the entire new energy vehicle industry.
Rapid development of the photovoltaic and energy storage industries: In the photovoltaic sector, global demand for renewable energy continues to rise, driving sustained growth in photovoltaic power generation capacity. The application of SiC MOSFETs in photovoltaic inverters can significantly improve inverter conversion efficiency and reduce energy loss. Traditional silicon-based IGBT inverters typically achieve conversion efficiencies of 96%-98%, while inverters using SiC MOSFETs can exceed 99% efficiency, meaning they can generate more electricity under the same lighting conditions. Additionally, the high-frequency characteristics of SiC MOSFETs enable the reduction in size and weight of passive components such as inductors and capacitors within inverters, thereby lowering system costs. In the energy storage sector, as the energy storage market continues to expand, the application of SiC MOSFETs in energy storage converters (PCS) is becoming increasingly widespread. They enhance the charging and discharging efficiency of energy storage systems, extend battery lifespan, and improve system stability and reliability. For example, in some large-scale energy storage power plant projects, energy storage converters using SiC MOSFET modules can achieve charging and discharging efficiencies of over 98%, significantly improving the economic benefits of energy storage systems.
Industrial energy conservation and power system upgrade requirements: In the industrial sector, there is an urgent need for energy conservation and consumption reduction in various industrial equipment such as motor drives and power converters. The application of SiC MOSFETs can significantly reduce the energy consumption of industrial equipment and improve production efficiency. For example, in industrial motor drive systems, replacing traditional silicon-based devices with SiC MOSFETs can increase system efficiency by 3%-5%, saving a significant amount of electricity annually. In the power system sector, as smart grid construction progresses, the performance and reliability requirements for power electronic devices continue to rise. SiC MOSFETs hold broad application prospects in fields such as high-voltage direct current transmission (HVDC) and flexible alternating current transmission systems (FACTS). They can enhance power system transmission efficiency, strengthen grid stability and controllability, and meet the evolving demands of power systems toward higher voltages, larger capacities, and greater intelligence.
This report aims to provide a comprehensive presentation of the global market for SiC MOSFET Chips (Devices) and Module, focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of SiC MOSFET Chips (Devices) and Module by region & country, by Type, and by Application.
The SiC MOSFET Chips (Devices) and Module market size, estimations, and forecasts are provided in terms of sales volume (K Units) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding SiC MOSFET Chips (Devices) and Module.
Market Segmentation
By Company
Segment by Type
Segment by Application
By Region
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (value, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of SiC MOSFET Chips (Devices) and Module manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of SiC MOSFET Chips (Devices) and Module in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of SiC MOSFET Chips (Devices) and Module in country level. It provides sigmate data by Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.