PUBLISHER: QYResearch | PRODUCT CODE: 1873462
PUBLISHER: QYResearch | PRODUCT CODE: 1873462
The global market for APD (Avalanche Photodiode) was estimated to be worth US$ 153 million in 2024 and is forecast to a readjusted size of US$ 238 million by 2031 with a CAGR of 6.5% during the forecast period 2025-2031.
This report provides a comprehensive assessment of recent tariff adjustments and international strategic countermeasures on APD (Avalanche Photodiode) cross-border industrial footprints, capital allocation patterns, regional economic interdependencies, and supply chain reconfigurations.
An Avalanche Photodiode (APD) is a highly sensitive semiconductor photodetector that exploits the avalanche multiplication effect to amplify weak optical signals.
Key characteristics include:
Operating Principle
Utilizes impact ionization in a high-electric-field region to generate secondary electron-hole pairs, achieving internal gain (typically 10-1000x).
Structure
Composed of p-n/p-i-n junctions with a dedicated avalanche region (e.g., InP/InGaAs for near-infrared).
Performance Metrics
High quantum efficiency (70-90%) and low noise (low excess noise factor).
Fast response time (sub-nanosecond) for high-speed applications.
Technological development direction
Material innovation: Silicon-based and InGaAs avalanche diodes will become mainstream. Among them, silicon-based APDs have a significant cost advantage in the 800-1000nm band, while IngaAS APDs perform better in the 1000-1700nm band.
Integration: Photonic integrated circuit (PIC) technology promotes the single-chip integration of APD with devices such as lasers and modulators, reducing system costs and volume.
Applications of third-generation semiconductors: The penetration rate of silicon carbide-based avalanche diodes is expected to increase from 8% in 2024 to 25% in 2030, meeting the demands of high-temperature and high-frequency scenarios.
Expansion of application fields
5G communication: The construction of 5G base stations and the demand for optical fiber communication have driven the market for high-frequency and high-voltage avalanche diodes, which is expected to account for 48% of the total APD application market.
LiDAR: The market size of APD for automotive LiDAR is expected to account for 35% of the total by 2030, becoming the largest growth point.
Quantum communication: The single-photon detection capability of quantum APD will promote the commercialization of quantum key distribution systems and their large-scale application in the financial and government sectors after 2028.
Localization and the competitive landscape
The domestic production rate of high-end APD will increase from the current 30% to over 50% by 2030.
The Yangtze River Delta and Pearl River Delta regions will concentrate over 75% of the country's production capacity, while the central and western regions will form new industrial clusters with policy support.
Policy and investment hotspots
The country's 14th Five-Year Plan has listed high-end photoelectric sensors as a key focus, with over 2 billion yuan invested in special funds.
Investment advice: Focus on IDM model enterprises, leading manufacturers of in-vehicle LiDAR, and innovative enterprises that master the core technologies of InGaAs.
This report aims to provide a comprehensive presentation of the global market for APD (Avalanche Photodiode), focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of APD (Avalanche Photodiode) by region & country, by Type, and by Application.
The APD (Avalanche Photodiode) market size, estimations, and forecasts are provided in terms of sales volume (K Units) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding APD (Avalanche Photodiode).
Market Segmentation
By Company
Segment by Type
Segment by Application
By Region
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (value, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of APD (Avalanche Photodiode) manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of APD (Avalanche Photodiode) in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of APD (Avalanche Photodiode) in country level. It provides sigmate data by Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.