PUBLISHER: The Business Research Company | PRODUCT CODE: 1924144
PUBLISHER: The Business Research Company | PRODUCT CODE: 1924144
A silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) is a power semiconductor device that utilizes silicon carbide material instead of conventional silicon, providing higher efficiency, faster switching speeds, and reduced power losses. This technology supports compact, energy-efficient designs with enhanced thermal performance when compared to traditional silicon-based MOSFETs.
The silicon carbide (SiC) MOSFET market primarily includes two types: SiC MOSFET modules and SiC MOSFET discretes. SiC MOSFET modules are power semiconductor devices that integrate multiple MOSFETs into a single package, offering higher power density, improved thermal management, and efficient power conversion. These devices are available across various voltage breakdown ranges, including 650-900V, 900-1200V, 1200-1700V, and above 1700V. They are manufactured using different wafer technologies, such as 200mm and 150mm wafer technology. Key application areas include power supplies, electric vehicles (EVs), renewable energy systems, motor drives, and industrial equipment. The market serves a wide range of end-use industries, including automotive, industrial, consumer electronics, telecommunications, and other related sectors.
Note that the outlook for this market is being affected by rapid changes in trade relations and tariffs globally. The report will be updated prior to delivery to reflect the latest status, including revised forecasts and quantified impact analysis. The report's Recommendations and Conclusions sections will be updated to give strategies for entities dealing with the fast-moving international environment.
Tariffs on semiconductor materials and fabrication equipment are impacting the SiC MOSFET market by increasing production costs, slowing supply chains, and creating pricing pressures for high-voltage devices. These effects are most visible across EVs, renewable energy systems, and industrial power electronics, with regions like Asia-Pacific and North America experiencing the largest manufacturing disruptions. However, tariffs have also encouraged localized production, strategic sourcing diversification, and new investments in regional SiC wafer and device fabrication, generating selective long-term benefits for the market.
The silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market research report is one of a series of new reports from The Business Research Company that provides silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market statistics, including silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) industry global market size, regional shares, competitors with a silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market share, detailed silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market segments, market trends and opportunities, and any further data you may need to thrive in the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) industry. This silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market research report delivers a complete perspective of everything you need, with an in-depth analysis of the current and future scenario of the industry.
The silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (mosfet) market size has grown exponentially in recent years. It will grow from $2.17 billion in 2025 to $2.71 billion in 2026 at a compound annual growth rate (CAGR) of 24.9%. The growth in the historic period can be attributed to rising demand for high-efficiency power devices, early adoption of wide-bandgap semiconductors, growth in industrial automation, increasing power density requirements, expansion of renewable power infrastructure.
The silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (mosfet) market size is expected to see exponential growth in the next few years. It will grow to $6.56 billion in 2030 at a compound annual growth rate (CAGR) of 24.8%. The growth in the forecast period can be attributed to surge in ev manufacturing, scaling of 200 mm wafer technology, expansion of smart grids, rising investment in high-voltage charging systems, growing shift toward compact power modules. Major trends in the forecast period include ai-driven power optimization, sustainable high-efficiency power devices, smart mobility power electronics advancements, intelligent manufacturing for sic mosfet production, ev powertrain electrification enhancements.
The growing adoption of electric vehicles (EVs) is expected to drive the expansion of the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market. EVs, which utilize electric motors powered by rechargeable batteries or fuel cells instead of internal combustion engines, are favored for their lower emissions and superior energy efficiency. Their rising popularity is fueled by environmental concerns, advancements in battery technology, and government incentives that make them more sustainable and accessible alternatives to traditional vehicles. SiC MOSFETs play a critical role in enhancing EV performance by enabling better energy efficiency, faster switching, and improved power management, making them ideal for high-performance EV systems. For example, in January 2024, the U.S. Department of Energy, a US-based government agency, reported that in December 2023, plug-in electric vehicles accounted for 9.8% of all light-duty vehicle sales, up from 7.8% in December 2022. Throughout 2023, plug-in vehicles consistently represented at least 8% of monthly sales, compared to a range of 5.5% to 7.8% in 2022. Therefore, the rising adoption of EVs is directly contributing to the growth of the SiC MOSFET market.
Leading companies in the SiC MOSFET market are investing in the development of next-generation products to maximize efficiency and minimize power losses. These advanced SiC MOSFETs are engineered to offer lower conduction losses, superior thermal performance, higher power density, and faster switching speeds, making them ideal for applications such as EVs, renewable energy systems, and industrial equipment. For instance, in September 2024, STMicroelectronics N.V., a Switzerland-based semiconductor manufacturer, launched its fourth-generation STPOWER SiC MOSFET technology. The new devices, available in 750V and 1200V variants, deliver lower on-resistance, faster switching, and increased robustness. These enhancements are particularly beneficial for EV traction inverters, supporting both 400V and 800V EV architectures. The improved efficiency contributes to faster charging times and reduced overall vehicle weight, accelerating widespread EV adoption.
In January 2025, ON Semiconductor Corporation, a US-based semiconductor manufacturing and technology company, acquired Qorvo's Silicon Carbide JFET Technology Business for $115 million. Through this acquisition, onsemi aimed to strengthen its wide bandgap power semiconductor portfolio and accelerate the deployment of high-efficiency SiC switching solutions for electric vehicle, AI data center, and industrial power applications. Qorvo Inc., based in the US, provides silicon carbide (SiC) power semiconductor products.
Major companies operating in the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (mosfet) market are Mitsubishi Electric Corporation, Toshiba Corporation, Texas Instruments Incorporated, STMicoelectronics N.V., Infineon Technologies AG, ON Semiconductor Corporation, Fuji Electric Co. Ltd., Microchip Technology Inc., Qorvo Inc., ROHM Co. Ltd., Vishay Intertechnology Inc., Littelfuse Inc., Alpha and Omega Semiconductor, Wolfspeed Inc., Semikron Danfoss, Sansha Electric Manufacturing Co. Ltd., Navitas Semiconductor, WeEn Semiconductors, Micro Commercial Components (MCC), Solitron Devices Inc.
Asia-Pacific was the largest region in the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market in 2025. Asia-Pacific is expected to be the fastest-growing region in the forecast period. The regions covered in the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (mosfet) market report are Asia-Pacific, South East Asia, Western Europe, Eastern Europe, North America, South America, Middle East, Africa.
The countries covered in the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (mosfet) market report are Australia, Brazil, China, France, Germany, India, Indonesia, Japan, Taiwan, Russia, South Korea, UK, USA, Canada, Italy, Spain.
The silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market consists of revenues earned by entities by providing services such as fabrication and wafer processing, testing and validation, integration support for power electronics systems, consulting and research and development and maintenance and performance optimization. The market value includes the value of related goods sold by the service provider or included within the service offering. The silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) market also includes sales of silicon carbide (SiC) wafers and substrates, gate drivers, integrated circuits (ICs), and silicon carbide (SiC)-based power converters. Values in this market are 'factory gate' values, that is, the value of goods sold by the manufacturers or creators of the goods, whether to other entities (including downstream manufacturers, wholesalers, distributors, and retailers) or directly to end customers. The value of goods in this market includes related services sold by the creators of the goods.
The market value is defined as the revenues that enterprises gain from the sale of goods and/or services within the specified market and geography through sales, grants, or donations in terms of the currency (in USD unless otherwise specified).
The revenues for a specified geography are consumption values that are revenues generated by organizations in the specified geography within the market, irrespective of where they are produced. It does not include revenues from resales along the supply chain, either further along the supply chain or as part of other products.
Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) Market Global Report 2026 from The Business Research Company provides strategists, marketers and senior management with the critical information they need to assess the market.
This report focuses silicon carbide (sic) metal-oxide-semiconductor field-effect transistor (mosfet) market which is experiencing strong growth. The report gives a guide to the trends which will be shaping the market over the next ten years and beyond.
Where is the largest and fastest growing market for silicon carbide (sic) metal-oxide-semiconductor field-effect transistor (mosfet) ? How does the market relate to the overall economy, demography and other similar markets? What forces will shape the market going forward, including technological disruption, regulatory shifts, and changing consumer preferences? The silicon carbide (sic) metal-oxide-semiconductor field-effect transistor (mosfet) market global report from the Business Research Company answers all these questions and many more.
The report covers market characteristics, size and growth, segmentation, regional and country breakdowns, total addressable market (TAM), market attractiveness score (MAS), competitive landscape, market shares, company scoring matrix, trends and strategies for this market. It traces the market's historic and forecast market growth by geography.
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