PUBLISHER: TechSci Research | PRODUCT CODE: 1878877
PUBLISHER: TechSci Research | PRODUCT CODE: 1878877
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The Global SiC Power Semiconductor Market, valued at USD 3.64 Billion in 2024, is projected to experience a CAGR of 30.44% to reach USD 17.93 Billion by 2030. Silicon Carbide (SiC) power semiconductors are wide bandgap materials, fundamentally composed of silicon and carbon, engineered to deliver superior electrical and thermal performance compared to traditional silicon-based devices, facilitating higher voltage handling, faster switching speeds, and operation at elevated temperatures. The market for these advanced semiconductors is primarily driven by the escalating demand for energy-efficient solutions across diverse sectors. Significant impetus comes from the rapid proliferation of electric vehicles, necessitating efficient power conversion systems, and the expansion of renewable energy infrastructure.
| Market Overview | |
|---|---|
| Forecast Period | 2026-2030 |
| Market Size 2024 | USD 3.64 Billion |
| Market Size 2030 | USD 17.93 Billion |
| CAGR 2025-2030 | 30.44% |
| Fastest Growing Segment | SiC Bare Die Devices |
| Largest Market | Asia Pacific |
Key Market Drivers
The expanding adoption of electric vehicles represents a pivotal driver for the global silicon carbide power semiconductor market. SiC devices deliver superior power efficiency and thermal management essential for high-voltage systems in modern electric vehicles, facilitating extended driving ranges, faster charging, and reduced system size and weight for components like traction inverters and onboard chargers. This electrification directly correlates with the demand for robust power electronics. According to the International Energy Agency's "Global Electric Vehicle Outlook 2024", in April 2024, global electric vehicle sales were projected to reach approximately 17 million by the end of 2024, underscoring the substantial market for advanced semiconductor solutions.
Key Market Challenges
The high manufacturing cost associated with Silicon Carbide (SiC) power semiconductors presents a significant impediment to the broader adoption and overall growth of the market. The production of SiC devices requires more capital-intensive processes compared to established silicon-based components, leading to higher unit costs for SiC power semiconductors. This elevated cost structure directly affects the pricing of end products, making SiC solutions less economically attractive for various applications where performance benefits do not sufficiently outweigh the increased initial investment.
Key Market Trends
The transition to larger diameter SiC wafers represents a significant trend in the global SiC power semiconductor market, primarily driven by the imperative to enhance manufacturing efficiency and reduce per-die costs. Moving from 6-inch to 8-inch wafers allows for a greater number of chips to be produced from a single wafer, thereby increasing output and improving economies of scale. According to SEMI, in February 2024, 200mm fab capacity for power and automotive semiconductors is projected to increase by 34% between 2023 and 2026. This scaling is crucial for meeting the escalating demand for SiC devices across various high-power applications. As a testament to this trend, Infineon officially opened the first phase of its new 200mm, or 8-inch, SiC power semiconductor fab in Kulim, Malaysia, on August 8, 2024, with large-scale production anticipated by 2025. This expansion is designed to establish the facility as the world's largest and most competitive 200mm SiC power semiconductor fabrication plant.
In this report, the Global SiC Power Semiconductor Market has been segmented into the following categories, in addition to the industry trends which have also been detailed below:
Company Profiles: Detailed analysis of the major companies presents in the Global SiC Power Semiconductor Market.
Global SiC Power Semiconductor Market report with the given market data, TechSci Research offers customizations according to a company's specific needs. The following customization options are available for the report: