PUBLISHER: AnalystView Market Insights | PRODUCT CODE: 1877410
PUBLISHER: AnalystView Market Insights | PRODUCT CODE: 1877410
The Silicon Carbide Power Semiconductors Market size was valued at US$ 1,978 Million in 2024, expanding at a CAGR of 18.9% from 2025 to 2032.
The silicon carbide (SiC) power semiconductors market focuses on devices such as MOSFETs, diodes, and modules made from SiC material, known for superior efficiency, high thermal conductivity, and voltage resistance compared to traditional silicon. These semiconductors enable faster switching, reduced energy loss, and compact designs, making them ideal for electric vehicles (EVs), renewable energy systems, industrial drives, and power supplies. Growing demand for energy-efficient solutions, EV adoption, and renewable integration drives rapid market expansion. However, the market faces high material and manufacturing costs, limited wafer supply, complex fabrication processes, and challenges in large-scale adoption and standardization.
Silicon Carbide Power Semiconductors Market- Market Dynamics
Robust growth in electric vehicles (EVs)
SiC is a wide-bandgap semiconductor with superior electrical and thermal properties compared to traditional silicon devices. It is ideal for the high-efficiency, high-power, and high-temperature environments typical in EV systems. SiC-based power semiconductors are extensively used in key EV components such as inverters, DC/DC converters, and onboard chargers. In inverters, which convert the battery's direct current (DC) into alternating current (AC) to drive the electric motor, SiC devices enable higher switching frequencies with lower energy losses. This results in improved power efficiency and less heat generation, reducing the size and complexity of cooling systems. The efficiency gains translate directly into extended driving range, a crucial factor to alleviate consumer range anxiety and promote EV adoption. Thus, the rapid growth of electric vehicles (EVs) significantly drives demand for Silicon Carbide (SiC) power semiconductors due to the critical performance improvements SiC delivers in EV power electronics. According to the data published in December 2024 by the U.S. Energy Information Administration (EIA), the share of electric and hybrid vehicle sales in the United States rose again in the third quarter of 2024 (3Q24), reaching a new record. Combined sales of hybrid vehicles, plug-in hybrid electric vehicles, and battery electric vehicles (BEVs) grew from 19.1% of total new light-duty vehicle (LDV) sales in the second quarter of 2024 (2Q24) to 21.2% in 3Q24.
The Global Silicon Carbide Power Semiconductors Market is segmented on the basis of Device Type, Wafer Size, Voltage Rating, End-user Industry, and Region.
The market is divided into five categories based on Device Type: Discrete MOSFET / JFET, Power Module, Schottky Diode, Bare Die, and Others. Discrete MOSFETs/JFETs for switching efficiency, Power Modules for integration, Schottky Diodes for fast recovery, Bare Dies for custom designs, and Others for specialized power applications.
The market is divided into three categories based on Wafer Size: 4-inch, 6-inch (150 mm), and 8-inch (200 mm+). 4-inch wafers are mainly used for prototyping and small-scale production, 6-inch (150 mm) wafers offer improved yields and moderate cost reductions, while 8-inch (200 mm+) designed for mass production, offering maximum scalability.
Silicon Carbide Power Semiconductors Market- Geographical Insights
The silicon carbide (SiC) power semiconductors market shows diverse geographical dynamics driven by regional economic power, industrial growth, and adoption of clean energy and electric vehicles (EVs). Asia-Pacific holds the largest share of the global SiC power semiconductor market, driven primarily by China, Japan, and South Korea. The region's rapid industrialization and growing consumer electronics market further fuel demand for SiC semiconductors. North America emerges as the fastest-growing region, propelled by robust investments in EV manufacturing, renewable energy infrastructure, and semiconductor production. Government policies bolstering domestic semiconductor production and clean energy adoption accelerate market growth. Europe holds a significant market share, driven by stringent emissions regulations and the shift to electrification and renewables, especially in Germany, France, and the U.K. Latin America and the Middle East & Africa show emerging growth based on expanding industrial infrastructure, smart grid investments, and renewable energy projects in countries like Brazil, Mexico, Saudi Arabia, and the UAE.
Silicon Carbide Power Semiconductors Market- Country Insights
China is a key player in the global Silicon Carbide (SiC) power semiconductor market, driven by rapid industrialization, growing adoption of electric vehicles (EVs), and renewable energy expansion. The country's government has been aggressively promoting new energy vehicles (NEVs) and energy-efficient technologies through subsidies, favorable policies, and R&D support, creating strong demand for high-performance SiC devices. Domestic manufacturers are increasingly investing in SiC wafer production, device fabrication, and power modules to reduce dependency on imports, improve cost efficiency, and capture the growing EV and industrial power markets.
The silicon carbide (SiC) power semiconductors market is highly competitive and rapidly growing due to increasing demand in automotive, industrial, and renewable energy sectors. Additionally, the market is dominated by a few major players controlling over 90% of global revenue, highlighting the high capital and intellectual property barriers typical of this sector. Moreover, the key players benefit from extensive research and development capabilities, vertical integration strategies, and strong supply chains to maintain their leading positions. For instance, in April 2025, Infineon Technologies AG launched its CoolSiC MOSFET 750 V G2, designed to enhance system efficiency and increase power density in automotive and industrial power electronics applications. This new generation offered ultra-low RDS (on) values, with typical resistances up to 60 mΩ at 25°C, and featured options as low as 4 mΩ and 7 mΩ, making it suitable for various high-performance applications. Thus, the SiC power semiconductor market is poised for significant expansion, driven by technological advancements and strategic collaborations.
In April 2025, ROHM Co., Ltd., will introduce new high-power-density silicon carbide (SiC) power modules in the compact HSDIP20 package. The lineup includes 4-in-1 and 6-in-1 molded modules, optimized primarily for power factor correction (PFC) and LLC (inductor-inductor-capacitor) converters used in onboard chargers (OBCs) for electric vehicles (xEVs).
In November 2025, Mitsubishi Electric Corporation announced the commencement of sample shipments for its silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) bare die, designed for drive-motor inverters in electric vehicles (EVs), plug-in hybrid vehicles (PHEVs), and other electric vehicles (xEVs).