PUBLISHER: AnalystView Market Insights | PRODUCT CODE: 1927700
PUBLISHER: AnalystView Market Insights | PRODUCT CODE: 1927700
The IGBT And Super Junction MOSFET Market size was valued at US$14,987.67 Million in 2024, expanding at a CAGR of 12.5% from 2025 to 2032.
The IGBT power semiconductor device operates through the combined use of MOSFET gate control mechanisms and bipolar transistor power handling capabilities. The system functions as a power switching device which provides precise control for heavy electrical loads that operate within the range of medium voltage to high voltage. IGBTs power electric vehicle traction inverters industrial motor drives railway systems uninterruptible power supplies (UPS) and renewable energy inverters because these applications require their ability to operate with high power density and deliver dependable performance at all times. The Super Junction MOSFET operates as an advanced power MOSFET through its special internal design which uses alternating p- and n-type regions to achieve substantial on-resistance reductions while maintaining high breakdown voltage. SJ MOSFETs achieve better efficiency than traditional MOSFETs because their design enables power conversion across a wide range of low-to-medium voltage and high-frequency switching situations.
IGBT And Super Junction MOSFET Market- Market Dynamics
Renewable energy & grid modernization
The market for power semiconductor devices which include IGBTs and super-junction MOSFETs shows growth because the expansion of renewable energy and the modernization of power grids serve as the main drivers for market development. The power conversion technologies used in solar and wind power systems need to achieve high efficiency and reliability because these technologies operate in inverters, converters, and energy storage interfaces, which depend on their performance. The power grid system requires upgrades to handle increased electricity demand and enable two-way power transmission and connect renewable energy sources. The implementation of grid modernization projects which use smart grid technology and high-voltage direct current (HVDC) transmission systems and advanced substations requires power electronics to achieve improved efficiency and system stability and power quality improvements. The demand for high-performance power semiconductors increases because government and utility organizations invest in clean energy initiatives and resilient grid systems which create a direct path to market expansion. For instance, according to the International Energy Agency, the share of renewables in global electricity generation is projected to rise from 32% in 2024 to 43% by 2030.
By Type
In 2024, the insulated gate bipolar transistor holds a high revenue share. The increasing use of Insulated Gate Bipolar Transistors (IGBTs) for high-power and high-voltage applications serves as the main factor driving this market growth. The IGBT revenue growth receives its main support from the fast development of electrification technologies which solution electric vehicles and renewable energy systems and industrial motor drives and railway traction systems need power control solutions that operate with high efficiency and reliability. The applications choose IGBTs because these devices deliver cost advantages through their ability to operate at high voltages while producing minimal conduction losses and supporting high current densities.
By Application
The renewable energy dominates the market. The expansion of renewable energy infrastructure throughout the world has resulted in substantial revenue growth for the market. The deployment of solar photovoltaic and wind power systems at large scales needs power conversion solutions together with voltage regulation systems and grid integration technologies which rely on IGBTs and super-junction MOSFETs for their core functions. IGBTs serve as the primary technology for high-power solar and wind inverters and grid-tie converters and energy storage systems because they provide reliable power handling at high voltages and large currents and continuous power loads.
IGBT And Super Junction MOSFET Market- Geographical Insights
The Asia Pacific holds the largest revenue share over the projected period. The growth is owing to the rapid industrialization and urbanization in the region. Industrial activities have increased across China and India and Southeast Asian countries which generated a need for advanced power management systems. The APAC region will experience increased adoption of automotive and PV inverter production technologies according to upcoming developments in both sectors. The expansion of high-speed train networks will create substantial requirements for power semiconductor components. For instance, between 2021 and 2025, China's high-speed rail network surged by nearly 33 per cent from 37,900km to 50,400km, while its total railway network expanded by 12.8 per cent from 146,300km to 165,000km, according to data from the state operator.
The IGBT and Super-Junction MOSFET market experiences competition from two main groups which include established power semiconductor companies and larger semiconductor companies that produce various products. The IGBT market shows dominance from established module manufacturers which include Infineon Mitsubishi Electric Fuji Electric and SEMIKRON who together control a significant portion of worldwide module sales because newcomers face high obstacles to entry which include extensive research development requirements and established product reliability and developed module packaging systems.
In October 2025, the company Magnachip Semiconductor Corporation introduced two 650V Super Junction MOSFET (SJ MOSFET) products which use the TO-Leadless (TOLL) package to fulfill the power and current demands of high-end consumer electronic products such as premium TVs and gaming monitors and AI laptop adaptors and chargers.
In March 2025, Infineon Technologies AG is developing TRENCHSTOP(TM) 7 H7 IGBTs in the new DTO247 package, which has the size of two TO247 packages. With a nominal current rating of up to 350 A, they will be the most powerful discrete IGBTs on the market. The new devices are ideal for solar inverters, uninterruptible power supplies (UPS) and energy storage systems (ESS).