PUBLISHER: Global Industry Analysts, Inc. | PRODUCT CODE: 1758979
PUBLISHER: Global Industry Analysts, Inc. | PRODUCT CODE: 1758979
Global GaN (Gallium Nitride) on Silicon (Si) Epitaxial (EPI) Wafers Market to Reach US$5.0 Billion by 2030
The global market for GaN (Gallium Nitride) on Silicon (Si) Epitaxial (EPI) Wafers estimated at US$2.0 Billion in the year 2024, is expected to reach US$5.0 Billion by 2030, growing at a CAGR of 16.9% over the analysis period 2024-2030. Lateral GaN on Si Structure, one of the segments analyzed in the report, is expected to record a 17.2% CAGR and reach US$3.2 Billion by the end of the analysis period. Growth in the Vertical GaN on Si Structure segment is estimated at 15.4% CAGR over the analysis period.
The U.S. Market is Estimated at US$515.9 Million While China is Forecast to Grow at 16.0% CAGR
The GaN (Gallium Nitride) on Silicon (Si) Epitaxial (EPI) Wafers market in the U.S. is estimated at US$515.9 Million in the year 2024. China, the world's second largest economy, is forecast to reach a projected market size of US$773.2 Million by the year 2030 trailing a CAGR of 16.0% over the analysis period 2024-2030. Among the other noteworthy geographic markets are Japan and Canada, each forecast to grow at a CAGR of 15.6% and 14.6% respectively over the analysis period. Within Europe, Germany is forecast to grow at approximately 12.4% CAGR.
Global "GaN (Gallium Nitride) on Silicon (Si) Epitaxial (EPI) Wafers" Market - Key Trends & Drivers Summarized
Why Is GaN-on-Silicon Emerging as a Game-Changer in Semiconductor Materials?
Gallium Nitride (GaN) on Silicon Epitaxial (EPI) wafers are transforming the semiconductor landscape by offering a superior performance-to-cost ratio in high-power and high-frequency electronic applications. Combining the wide bandgap and high electron mobility of GaN with the affordability and scalability of silicon substrates, this hybrid technology is enabling the production of more efficient, compact, and thermally stable devices. GaN-on-Si has gained significant traction in applications such as 5G base stations, satellite communications, automotive LiDAR, radar, and power conversion systems in electric vehicles. Unlike traditional silicon-based semiconductors, GaN-on-Si devices can operate at higher voltages and switching frequencies with minimal energy loss, which makes them critical for next-generation wireless and energy infrastructure. The ability to fabricate larger-diameter wafers (6-inch and 8-inch) at relatively lower cost compared to GaN-on-SiC or GaN-on-sapphire has further positioned GaN-on-Si as a commercially viable option for mass production, especially in cost-sensitive yet performance-demanding sectors.
How Are Advancements in Epitaxy and Substrate Engineering Enhancing Wafer Quality?
Technological progress in epitaxial growth methods-particularly Metal Organic Chemical Vapor Deposition (MOCVD) and Molecular Beam Epitaxy (MBE)-has significantly improved GaN-on-Si wafer quality by reducing dislocation densities and enhancing thermal and structural reliability. Enhanced buffer layer designs and stress management techniques, such as using graded AlGaN layers and patterned silicon substrates, are allowing for better lattice matching, minimized wafer bowing, and increased mechanical strength. These innovations have resolved some of the historical limitations associated with GaN-on-Si integration, such as cracking and warping during high-temperature processing. Furthermore, advancements in wafer-level metrology and in-line monitoring tools are supporting high-yield production by ensuring uniform layer thickness, doping precision, and defect detection. Integration of GaN-on-Si into CMOS-compatible workflows is also advancing, particularly for RF front-end modules and power ICs. These technological leaps are paving the way for GaN-on-Si wafers to become foundational components in high-efficiency power electronics and wireless communication ecosystems.
Where Is Market Demand Accelerating Most Rapidly and Why?
Market demand for GaN-on-Si EPI wafers is accelerating across multiple high-growth industries driven by the need for compact, efficient, and high-power devices. The consumer electronics sector is increasingly adopting GaN-based fast chargers and power adapters, spurring volume demand for GaN-on-Si substrates that allow for economical large-scale manufacturing. In telecommunications, GaN-on-Si is being widely adopted for 5G infrastructure, where its ability to handle high power at high frequencies with reduced thermal losses is crucial. The automotive industry is leveraging GaN-on-Si for onboard chargers and powertrain inverters in electric vehicles to meet stringent energy efficiency and weight reduction goals. Aerospace and defense sectors are deploying GaN-on-Si in radar, satellite, and RF communications systems due to its radiation hardness and operational stability. Geographic demand is strongest in Asia-Pacific-especially China, South Korea, and Taiwan-where semiconductor fabs and government-backed research initiatives are advancing GaN material adoption. North America and Europe are also witnessing a surge in R&D funding and fab expansions focused on wide bandgap semiconductors.
The Growth in the GaN-on-Silicon Epitaxial Wafers Market Is Driven by Several Factors…
The growth in the GaN-on-Silicon Epitaxial Wafers market is driven by several factors rooted in end-use diversification, fabrication innovation, and performance-centric demand. First, the rapid global rollout of 5G and high-frequency RF systems is necessitating high-performance, thermally efficient substrates, for which GaN-on-Si is exceptionally well-suited. Second, the electrification of transportation and proliferation of EVs is pushing automotive OEMs to adopt GaN-on-Si in power conversion systems that require high efficiency and compact footprints. Third, advances in MOCVD and epitaxy techniques have improved wafer quality, reliability, and scale, making GaN-on-Si increasingly cost-competitive. Fourth, the consumer electronics market’s shift toward ultra-fast charging technologies is directly increasing the volume demand for GaN-on-Si wafers used in compact, high-wattage power adapters. Additionally, growing public and private investments in semiconductor R&D, especially in Asia-Pacific and Europe, are accelerating commercialization timelines. These interconnected drivers are establishing GaN-on-Si as a strategic material in the evolution of the global semiconductor supply chain.
SCOPE OF STUDY:
The report analyzes the GaN (Gallium Nitride) on Silicon (Si) Epitaxial (EPI) Wafers market in terms of units by the following Segments, and Geographic Regions/Countries:
Segments:
Structure (Lateral GaN on Si Structure, Vertical GaN on Si Structure, Hybrid GaN on Si Structure); Procurement Model (Tender Based Procurement Model, Direct Purchase Procurement Model); Vertical (IT & Telecom Vertical, Consumer Electronics Vertical, Automotive Vertical, Aerospace & Defense Vertical, Other Verticals)
Geographic Regions/Countries:
World; United States; Canada; Japan; China; Europe (France; Germany; Italy; United Kingdom; and Rest of Europe); Asia-Pacific; Rest of World.
Select Competitors (Total 47 Featured) -
AI INTEGRATIONS
We're transforming market and competitive intelligence with validated expert content and AI tools.
Instead of following the general norm of querying LLMs and Industry-specific SLMs, we built repositories of content curated from domain experts worldwide including video transcripts, blogs, search engines research, and massive amounts of enterprise, product/service, and market data.
TARIFF IMPACT FACTOR
Our new release incorporates impact of tariffs on geographical markets as we predict a shift in competitiveness of companies based on HQ country, manufacturing base, exports and imports (finished goods and OEM). This intricate and multifaceted market reality will impact competitors by increasing the Cost of Goods Sold (COGS), reducing profitability, reconfiguring supply chains, amongst other micro and macro market dynamics.