PUBLISHER: IMARC | PRODUCT CODE: 1308171
PUBLISHER: IMARC | PRODUCT CODE: 1308171
The global next generation memory market size reached US$ 4.8 Billion in 2022. Looking forward, IMARC Group expects the market to reach US$ 21.4 Billion by 2028, exhibiting a growth rate (CAGR) of 26.9% during 2023-2028.
Next generation memory refers to a fast, efficient and cost-effective storage solution that can store more data than silicon chips. It consequently finds extensive applications in the telecommunications, information technology (IT), and banking, financial services and insurance (BFSI) industries across the globe. At present, there is a surge in the requirement for high bandwidth, low power consumption, and highly scalable memory devices that rely on artificial intelligence (AI), the Internet of things (IoT), big data and other technologies. This, in turn, is catalyzing the demand for next generation memory.
Non-Volatile
Magneto-Resistive Random-Access Memory (MRAM)
Ferroelectric RAM (FRAM)
Resistive Random-Access Memory (ReRAM)
3D Xpoint
Nano RAM
Other Non-Volatile Technologies (Phase change RAM, STT-RAM, and SRAM)
Volatile
Hybrid Memory Cube (HMC)
High-Bandwidth Memory (HBM)
Mass Storage
Embedded Storage
Others
BFSI
Consumer Electronics
Government
Telecommunications
Information Technology
Others
North America
United States
Canada
Asia-Pacific
China
Japan
India
South Korea
Australia
Indonesia
Others
Europe
Germany
France
United Kingdom
Italy
Spain
Russia
Others
Latin America
Brazil
Mexico
Others
Middle East and Africa
The competitive landscape of the industry has also been examined along with the profiles of the key players being Avalanche Technology, Crossbar Inc., Fujitsu Limited, Honeywell International Inc., Infineon Technologies AG, Intel Corporation, Micron Technology Inc., Nantero Inc., Samsung Electronics Co. Ltd., SK hynix Inc., Spin Memory Inc. and Taiwan Semiconductor Manufacturing Co. Ltd.