PUBLISHER: QYResearch | PRODUCT CODE: 1860063
PUBLISHER: QYResearch | PRODUCT CODE: 1860063
The global market for Silicon Carbide Power Semiconductors was estimated to be worth US$ 4872 million in 2024 and is forecast to a readjusted size of US$ 18366 million by 2031 with a CAGR of 20.5% during the forecast period 2025-2031.
This report provides a comprehensive assessment of recent tariff adjustments and international strategic countermeasures on Silicon Carbide Power Semiconductors cross-border industrial footprints, capital allocation patterns, regional economic interdependencies, and supply chain reconfigurations.
Silicon carbide (SiC) power semiconductors are wide-bandgap power devices that enable higher breakdown voltages, faster switching, lower conduction and switching losses, and superior thermal performance compared with silicon parts. Primary product types include SiC Schottky barrier diodes (SBDs), discrete SiC MOSFETs (planar and trench/groove variants), SiC JFETs (less common), bare die and discrete packaged parts, and integrated SiC power modules (half-bridge, three-level, etc.). These devices are manufactured as wafers (substrate -> epitaxy -> device front-end) and then singulated, qualified and packaged; product portfolios are often segmented by voltage class (e.g., 600 V, 1200 V, 1700-3300 V) and by form factor (bare die for module assembly, discrete TO/Power packages, or fully integrated modules).
SiC power semiconductors are adopted across traction inverters for EVs, on-board chargers and DC-DC converters, fast chargers, renewable-energy (PV/utility) inverters, industrial motor drives, traction/rail, and high-efficiency data center and telecom power supplies. The industry value chain comprises upstream crystal and substrate growers, epitaxial wafer producers, midstream device fabs and IP owners (device process, gate & trench tech), back-end package/module houses, test & qualification labs, and downstream OEM/system integrators (automotive Tier-1s, inverter/OEMs). Major global suppliers include STMicroelectronics, Infineon, Wolfspeed (historically a leader in substrates and materials), ROHM, onsemi and the Japanese groups (Toshiba/Mitsubishi in certain segments), with regional OEMs and Chinese challengers expanding capacity. Market research and industry roadmaps show strong demand growth (especially for EV traction inverters) and an industry-wide migration to 200 mm SiC wafer manufacturing to reduce unit costs and scale output - a shift already being commercialized by multiple vendors.
Industry status and near-term trends: SiC adoption is accelerating but remains supply-constrained in places because upstream substrate/epi capacity and qualified 200 mm manufacturing are strategic bottlenecks; vendors are investing heavily in 200 mm fabs and vertical integration to lower cost per die and improve yields. System trends include tighter automotive qualification (AEC-Q/functional safety), module-level innovation (parasitic reduction, advanced substrates and cooling), and increasing use of digital qualification/characterization. Commercial demand drivers-EV traction inverters, fast chargers and grid inverters-support multi-year CAGR expectations for SiC content per vehicle and per inverter system, even as individual vendor fortunes vary (notably Wolfspeed has faced major financial restructuring in 2025). Overall, expect continuing multi-year growth for SiC devices, marked by rapid capacity expansion, intensified competition on 200 mm scale-up, and downstream system optimization to capture SiC's efficiency gains.
This report aims to provide a comprehensive presentation of the global market for Silicon Carbide Power Semiconductors, focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of Silicon Carbide Power Semiconductors by region & country, by Type, and by Application.
The Silicon Carbide Power Semiconductors market size, estimations, and forecasts are provided in terms of sales volume (K Pcs) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding Silicon Carbide Power Semiconductors.
Market Segmentation
By Company
Segment by Type
Segment by Application
By Region
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (value, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of Silicon Carbide Power Semiconductors manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of Silicon Carbide Power Semiconductors in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of Silicon Carbide Power Semiconductors in country level. It provides sigmate data by Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.