PUBLISHER: QYResearch | PRODUCT CODE: 1860076
PUBLISHER: QYResearch | PRODUCT CODE: 1860076
The global market for SiC Power Devices was estimated to be worth US$ 4872 million in 2024 and is forecast to a readjusted size of US$ 18366 million by 2031 with a CAGR of 20.5% during the forecast period 2025-2031.
This report provides a comprehensive assessment of recent tariff adjustments and international strategic countermeasures on SiC Power Devices cross-border industrial footprints, capital allocation patterns, regional economic interdependencies, and supply chain reconfigurations.
Silicon carbide (SiC) power devices are wide-bandgap semiconductor components-chiefly SiC Schottky barrier diodes (SBDs), SiC MOSFETs (discrete and trench/planar variations), SiC JFETs, and integrated SiC power modules-that deliver much higher breakdown voltages, faster switching, lower conduction and switching losses, and superior thermal performance than silicon counterparts. Product types range from low-voltage (<= 200-650 V) and automotive-grade 600-1200 V discrete MOSFETs and SBDs used in onboard chargers (OBCs) and DC-DC converters, to high-voltage (1200 V-3300 V and above) power MOSFETs and packaged modules deployed in EV traction inverters, PV/utility inverters, industrial motor drives and traction/rail applications. Key applications today are dominated by electric vehicles (traction inverters and on-board charging), fast chargers, renewable-energy inverters, data-center and telecom power supplies, and industrial drives-areas that benefit most from SiC's efficiency and thermal advantages and where system-level cost and efficiency tradeoffs favor SiC adoption.
The SiC ecosystem (value chain) spans upstream raw-material and substrate suppliers (bulk SiC crystal growers and wafer makers), epitaxial (epi) wafer manufacturers, device fabs (front-end processing), power-module and packaging specialists, test & qualification services, and downstream system integrators/OEMs (automotive Tier-1s, inverter makers, datacenter PSU vendors). Upstream concentration and capacity (substrates/epi) are strategic bottlenecks that determine cost and yield; midstream device makers add process IP (implantation, gate technology, trench or planar MOS structures) and qualification for automotive AEC-Q/TS standards; downstream players drive integration into modules and cooling/thermal management solutions. Leading device suppliers include STMicroelectronics, Infineon, Wolfspeed (Cree), ROHM, onsemi, Toshiba/Mitsubishi and several Chinese and Japanese challengers-competition has intensified as these players scale 150-200 mm wafer flows and pursue module partnerships. Industry developments to watch: widescale migration to 200 mm SiC manufacturing to lower unit cost (major vendors announced 200 mm roadmaps), consolidation and verticalization (some substrate and epi play acquisitions/alliances), push for higher reliability and automotive qualification, and system-level optimization (SiC + Si hybrid topologies, smarter packaging and cooling). Market forecasts show multi-year double-digit CAGR as SiC penetration grows in EV traction and renewables, even as supply and short-term demand cycles create volatility for specific producers.
This report aims to provide a comprehensive presentation of the global market for SiC Power Devices, focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of SiC Power Devices by region & country, by Type, and by Application.
The SiC Power Devices market size, estimations, and forecasts are provided in terms of sales volume (K Pieces) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2031. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding SiC Power Devices.
Market Segmentation
By Company
Segment by Type
Segment by Application
By Region
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (value, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of SiC Power Devices manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of SiC Power Devices in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of SiC Power Devices in country level. It provides sigmate data by Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.