PUBLISHER: QYResearch | PRODUCT CODE: 1923680
PUBLISHER: QYResearch | PRODUCT CODE: 1923680
The global market for GaN HEMT Epitaxial Wafer was estimated to be worth US$ 554.9 million in 2025 and is forecast to a readjusted size of US$ 1,120 million by 2032 with a CAGR of 10.38% during the forecast period 2026-2032.
The global market for GaN-on-SiC Wafer was estimated to be worth US$ 271 million in 2025 and is forecast to a readjusted size of US$ 378 million by 2032 with a CAGR of 5.0% during the forecast period 2026-2032.
The global market for GaN-on-Si Wafer was estimated to be worth US$ 256 million in 2025 and is forecast to a readjusted size of US$ 678 million by 2032 with a CAGR of 14.17% during the forecast period 2026-2032.
North American market for GaN HEMT Epitaxial Wafer was valued at $ 170.26 million in 2025 and will reach $ 279.53 million by 2032, at a CAGR of 7.32 % during the forecast period of 2026 through 2032.
Europe market for GaN HEMT Epitaxial Wafer was valued at $ 104.65 million in 2025 and will reach $ 156.25 million by 2032, at a CAGR of 5.89 % during the forecast period of 2026 through 2032.
China Mainland market for GaN HEMT Epitaxial Wafer was valued at $ 196.55 million in 2025 and will reach $ 533.21 million by 2032, at a CAGR of 14.7 % during the forecast period of 2026 through 2032.
Japan market for GaN HEMT Epitaxial Wafer was valued at $ 32.46 million in 2025 and will reach $ 57.28 million by 2032, at a CAGR of 8.2% during the forecast period of 2026 through 2032.
The global key companies of GaN HEMT Epitaxial Wafer include Innoscience, Qorvo, Wolfspeed, Inc, NTT Advanced Technology (NTT-AT) , Enkris Semiconductor Inc, IQE, CETC 55, Soitec (EpiGaN) , DOWA Electronics Materials, Sumitomo Electric Device Innovations, CETC 13, Dynax Semiconductor, NXP, Sanan Optoelectronics and Renesas Electronics (Transphorm), etc. In 2025, the global six largest players hold a share approximately 55 % in terms of revenue.
The key players of GaN-on-SiC wafers include Qorvo, NXP, Wolfspeed, IQE, Soitec (EpiGaN), Sumitomo Electric Device Innovations, NTT Advanced Technology (NTT-AT), CETC 13, CETC 55 and Dynax Semiconductor, etc. In 2025, top ten players hold over 80% of global market.
The key players of GaN-on-Si wafers include Innoscience, IQE, NTT Advanced Technology (NTT-AT), DOWA Electronics Materials, and Enkris Semiconductor Inc, etc. In 2025, top four players hold over 70% of global market.
The global GaN HEMT epitaxial wafer industry has moved into an "industrial scaling" phase with a clear platform bifurcation: GaN-on-Si is the volume engine for power GaN (cost-down via 200 mm/8-inch and a roadmap toward 300 mm), while GaN-on-SiC remains the premium platform for RF GaN where thermal performance and RF loss dominate total cost of ownership. Demand visibility is strengthening because power GaN device adoption is forecast to expand rapidly-we projects the power GaN device market reaching ~$2.5 B by 2032, which translates into much higher wafer-start requirements for GaN-on-Si epi stacks. On the supply side, scaling is increasingly driven by large-diameter epitaxy capability and throughput investment: China-based InnoScience states it achieved mass production of 8-inch GaN-on-Si wafers, signaling that 200 mm GaN-on-Si is now industrial rather than experimental. In parallel, Europe's merchant (open) ecosystem is scaling RF-grade epi, for example SweGaN's facility planning references up to 40,000 (100/150 mm) GaN-on-SiC epiwafers per year as a high-volume target, reflecting a push to industrialize 150 mm GaN-on-SiC supply beyond pilot volumes. A second structural trend is the rise of engineered substrates to improve manufacturability and enable thicker/higher-voltage stacks at larger diameters; Shin-Etsu Chemical explicitly confirms it has sold 150 mm and 200 mm QST substrates and GaN-on-QST epitaxial substrates, and is developing 300 mm QST, indicating real commercial pull for alternative platforms aimed at power devices.
Looking forward, growth is driven by system-level electrification and efficiency (fast chargers moving up in power, data-center/telecom power density requirements, and industrial power conversion) plus sustained RF infrastructure/defense/satcom demand that keeps GaN-on-SiC a high-value lane. Standardization is also lowering adoption friction while raising the bar for epi/device robustness: JEDEC's JEP180 establishes a common approach for switching-reliability evaluation of GaN power devices in power-conversion conditions, reinforcing the industry shift from "DC parametrics" to application-relevant stress validation. Policy is increasingly a first-order variable because GaN supply chains are strategic and capex-intensive: the U.S. CHIPS and Science Act provides $52.7B over five years for semiconductor manufacturing/research programs, supporting onshore capacity and critical supply-chain investments. The EU's Chips Act similarly targets resilience and explicitly aims to double Europe's global semiconductor market share to 20% by 2030, improving the environment for compound-semiconductor pilot lines and industrialization. China's 14th Five-Year Plan also explicitly prioritizes developing silicon carbide, gallium nitride, and other wide-bandgap semiconductors, underpinning continued capacity buildout and localization efforts.
This report aims to provide a comprehensive presentation of the global market for GaN HEMT Epitaxial Wafer, focusing on the total sales volume, sales revenue, price, key companies market share and ranking, together with an analysis of GaN HEMT Epitaxial Wafer by region & country, by Wafer Type, and by Application.
The GaN HEMT Epitaxial Wafer market size, estimations, and forecasts are provided in terms of sales volume (Pieces) and sales revenue ($ millions), considering 2024 as the base year, with history and forecast data for the period from 2020 to 2032. With both quantitative and qualitative analysis, to help readers develop business/growth strategies, assess the market competitive situation, analyze their position in the current marketplace, and make informed business decisions regarding GaN HEMT Epitaxial Wafer.
Market Segmentation
By Company
Segment by Wafer Type
Segment by Application
Segment by Region
Chapter Outline
Chapter 1: Introduces the report scope of the report, global total market size (valve, volume and price). This chapter also provides the market dynamics, latest developments of the market, the driving factors and restrictive factors of the market, the challenges and risks faced by manufacturers in the industry, and the analysis of relevant policies in the industry.
Chapter 2: Detailed analysis of GaN HEMT Epitaxial Wafer manufacturers competitive landscape, price, sales and revenue market share, latest development plan, merger, and acquisition information, etc.
Chapter 3: Provides the analysis of various market segments by Wafer Type, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different market segments.
Chapter 4: Provides the analysis of various market segments by Application, covering the market size and development potential of each market segment, to help readers find the blue ocean market in different downstream markets.
Chapter 5: Sales, revenue of GaN HEMT Epitaxial Wafer in regional level. It provides a quantitative analysis of the market size and development potential of each region and introduces the market development, future development prospects, market space, and market size of each country in the world.
Chapter 6: Sales, revenue of GaN HEMT Epitaxial Wafer in country level. It provides sigmate data by Wafer Type, and by Application for each country/region.
Chapter 7: Provides profiles of key players, introducing the basic situation of the main companies in the market in detail, including product sales, revenue, price, gross margin, product introduction, recent development, etc.
Chapter 8: Analysis of industrial chain, including the upstream and downstream of the industry.
Chapter 9: Conclusion.