2025 Global GaN Power Device Market Analysis Report

This report provides an in-depth analysis of the global GaN power device market, outlining industry developments, trends, challenges, and opportunities to help businesses strategize and stay informed.

Key Highlights:

• The development of GaN technology is currently at a pivotal stage, transitioning from a technology that is mainly suited for a single application (i.e., fasting charging for consumer electronics) to diversification into multiple domains. This shift is driven by both technological advancements and a broadening range of applications. It is anticipated that GaN will enter an accelerated growth phase in the next 2-3 years, leading to widespread adoption and significant developments.
• AI servers, humanoid robots, automotive OBCs, and PV microinverters are major potential applications for GaN.
• GaN is advancing towards high-voltage applications in the range of 900-1200V, challenging SiC in some market segments. The progression of GaN technology will heavily rely on the development of new transistor structures such as Vertical GaN and new material platforms like GaN-on-Sapphire, GaN-on-QST, and GaN-on-GaN.
• A clear trend towards GaN ICs is emerging, which will enable the development of highly efficient, high-density, and low-EMI power systems.
• Lastly, 8-inch wafers are expected to become the mainstream size for the GaN market, and there is potential for 12-inch wafers to enter mass production within the next decade.