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PUBLISHER: TechSci Research | PRODUCT CODE: 1935043

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PUBLISHER: TechSci Research | PRODUCT CODE: 1935043

GaN Power Devices Market - Global Industry Size, Share, Trends, Opportunities, and Forecast Segmented By Device Type, By Voltage Range, By Application, By End User, By Region & Competition, 2021-2031F

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The Global GaN Power Devices Market is projected to expand from USD 520.17 Million in 2025 to USD 2,178.45 Million by 2031, registering a CAGR of 26.96%. Gallium Nitride power devices are wide bandgap semiconductor components that leverage high electron mobility to provide superior energy efficiency and faster switching speeds compared to traditional silicon. The market is primarily driven by the growing demand for rapid charging solutions in consumer electronics and the strict power density requirements of electric vehicle powertrains. Furthermore, the global rollout of renewable energy systems and the essential need for efficient power supplies in data centers act as foundational drivers supporting the sector's growth trajectory.

Market Overview
Forecast Period2027-2031
Market Size 2025USD 520.17 Million
Market Size 2031USD 2,178.45 Million
CAGR 2026-203126.96%
Fastest Growing SegmentPower Drivers
Largest MarketNorth America

However, widespread adoption faces a significant obstacle due to higher manufacturing costs and production complexities compared to mature silicon technologies. To demonstrate the industry's momentum in addressing these issues, SEMI reported in 2024 that global capacity for discrete semiconductors was projected to increase by 7%, reaching 4.4 million wafers per month. This statistical growth underscores a tangible commitment to scaling production capabilities to satisfy the surging requirements of electrification and advanced power management applications.

Market Driver

Escalating requirements for power efficiency in AI servers and hyperscale data centers are fundamentally reshaping the Global GaN Power Devices Market. As artificial intelligence workloads necessitate increasing computational levels, conventional silicon-based power supplies face difficulties in managing the associated energy density and heat constraints. GaN technology resolves this critical gap by facilitating smaller, cooler, and more efficient power supply units (PSUs) required for modern high-performance server racks. Illustrating the technical advancements meeting these needs, Navitas Semiconductor released a reference design in July 2024 that achieved a record power density of 137 W/in3, allowing data center operators to maximize processing power within limited footprints while adhering to energy sustainability goals.

Simultaneously, the rapid adoption of electric vehicle powertrains serves as a primary catalyst for market expansion, compelling manufacturers to incorporate GaN into onboard chargers and DC-DC converters to reduce charging times and weight. The automotive sector's transition toward 800V architectures demands the higher breakdown voltage and switching frequency capabilities that GaN offers over legacy materials. This strategic priority is driving significant industrial consolidation, evidenced by Renesas Electronics Corporation's June 2024 acquisition of a leading GaN provider for $339 million to strengthen its automotive portfolio. Such moves are indicative of the broader industry trajectory, further supported by Vishay Intertechnology's 2024 acquisition of the Newport Wafer Fab for $177 million to secure essential manufacturing capacity.

Market Challenge

High manufacturing costs and intricate production processes currently serve as a primary restraint on the Global GaN Power Devices Market. Unlike silicon, which benefits from massive economies of scale and decades of optimization, Gallium Nitride fabrication involves expensive substrates and complex epitaxial growth techniques that significantly raise the cost per unit. These technical hurdles lead to lower yield rates during the early phases of mass production, causing the final price of GaN components to remain considerably higher than their silicon counterparts. As a result, price-sensitive sectors often hesitate to switch to this technology despite its performance benefits, restricting widespread adoption to premium consumer electronics or high-performance applications like electric vehicles.

The financial burden of surmounting these manufacturing barriers is reflected in the substantial capital expenditure needed for specialized production facilities. According to SEMI, the power-related segment was projected in 2024 to see investments exceeding US$30 billion through 2027, with approximately US$14 billion specifically designated for compound semiconductor projects. This heavy investment requirement highlights the difficulty of scaling operations to a level where GaN can compete directly on price with established silicon technologies, thereby slowing its penetration into cost-critical market segments.

Market Trends

The shift toward 200mm (8-inch) GaN-on-Silicon wafer manufacturing is emerging as a critical trend to enhance the cost competitiveness of Gallium Nitride against silicon. Manufacturers are actively migrating from 150mm (6-inch) processes to larger diameter wafers, which significantly increases the die count per wafer and reduces the unit cost of power devices. This transition is essential for scaling production volumes to meet mass-market demands beyond niche high-end applications, effectively bridging the price gap with mature silicon technologies. Demonstrating this rapid expansion in manufacturing capability, Innoscience plans to increase its monthly production of 8-inch wafers from 13,000 to 20,000 by the end of 2025, underscoring the industry's strategic pivot toward larger wafer sizes to achieve necessary economies of scale.

At the same time, the development of GaN solutions for solar optimizers and microinverters is gaining traction as renewable energy systems prioritize higher power density and efficiency. GaN transistors are increasingly replacing silicon components in photovoltaic inverters to minimize switching losses and enable lighter, smaller form factors that are easier to install on residential and commercial rooftops. This technological integration allows for superior thermal management and energy harvesting, which are vital for optimizing the output of modern photovoltaic arrays. Highlighting this advancement, Enphase Energy launched its IQ9N-3P three-phase microinverter in September 2025, utilizing GaN technology to achieve a conversion efficiency of 97.5%, validating the superior performance of GaN in the evolving green energy landscape.

Key Market Players

  • Efficient Power Conversion Corporation
  • NXP Semiconductors
  • GaN Systems
  • Wolfspeed Inc.
  • Infineon Technologies AG
  • EPISTAR Corporation
  • Rohm Co. Ltd.
  • ON Semiconductor Corporation
  • Qorvo Inc.
  • MACOM Technology Solutions Holdings Inc.

Report Scope

In this report, the Global GaN Power Devices Market has been segmented into the following categories, in addition to the industry trends which have also been detailed below:

GaN Power Devices Market, By Device Type

  • Power Vs RF Power

GaN Power Devices Market, By Voltage Range

  • <200 Volt
  • 200-600 Volt & >600 Volt

GaN Power Devices Market, By Application

  • Power Drivers
  • Supply & Inverter & Radio Frequency

GaN Power Devices Market, By End User

  • Telecommunication
  • Industrial
  • Automotive
  • Renewables
  • Consumer & Enterprise
  • Military Defense
  • Aerospace & Medical

GaN Power Devices Market, By Region

  • North America
    • United States
    • Canada
    • Mexico
  • Europe
    • France
    • United Kingdom
    • Italy
    • Germany
    • Spain
  • Asia Pacific
    • China
    • India
    • Japan
    • Australia
    • South Korea
  • South America
    • Brazil
    • Argentina
    • Colombia
  • Middle East & Africa
    • South Africa
    • Saudi Arabia
    • UAE

Competitive Landscape

Company Profiles: Detailed analysis of the major companies present in the Global GaN Power Devices Market.

Available Customizations:

Global GaN Power Devices Market report with the given market data, TechSci Research offers customizations according to a company's specific needs. The following customization options are available for the report:

Company Information

  • Detailed analysis and profiling of additional market players (up to five).
Product Code: 1893

Table of Contents

1. Product Overview

  • 1.1. Market Definition
  • 1.2. Scope of the Market
    • 1.2.1. Markets Covered
    • 1.2.2. Years Considered for Study
    • 1.2.3. Key Market Segmentations

2. Research Methodology

  • 2.1. Objective of the Study
  • 2.2. Baseline Methodology
  • 2.3. Key Industry Partners
  • 2.4. Major Association and Secondary Sources
  • 2.5. Forecasting Methodology
  • 2.6. Data Triangulation & Validation
  • 2.7. Assumptions and Limitations

3. Executive Summary

  • 3.1. Overview of the Market
  • 3.2. Overview of Key Market Segmentations
  • 3.3. Overview of Key Market Players
  • 3.4. Overview of Key Regions/Countries
  • 3.5. Overview of Market Drivers, Challenges, Trends

4. Voice of Customer

5. Global GaN Power Devices Market Outlook

  • 5.1. Market Size & Forecast
    • 5.1.1. By Value
  • 5.2. Market Share & Forecast
    • 5.2.1. By Device Type (Power Vs RF Power)
    • 5.2.2. By Voltage Range (<200 Volt, 200-600 Volt & >600 Volt)
    • 5.2.3. By Application (Power Drivers, Supply & Inverter & Radio Frequency)
    • 5.2.4. By End User (Telecommunication, Industrial, Automotive, Renewables, Consumer & Enterprise, Military Defense, Aerospace & Medical)
    • 5.2.5. By Region
    • 5.2.6. By Company (2025)
  • 5.3. Market Map

6. North America GaN Power Devices Market Outlook

  • 6.1. Market Size & Forecast
    • 6.1.1. By Value
  • 6.2. Market Share & Forecast
    • 6.2.1. By Device Type
    • 6.2.2. By Voltage Range
    • 6.2.3. By Application
    • 6.2.4. By End User
    • 6.2.5. By Country
  • 6.3. North America: Country Analysis
    • 6.3.1. United States GaN Power Devices Market Outlook
      • 6.3.1.1. Market Size & Forecast
        • 6.3.1.1.1. By Value
      • 6.3.1.2. Market Share & Forecast
        • 6.3.1.2.1. By Device Type
        • 6.3.1.2.2. By Voltage Range
        • 6.3.1.2.3. By Application
        • 6.3.1.2.4. By End User
    • 6.3.2. Canada GaN Power Devices Market Outlook
      • 6.3.2.1. Market Size & Forecast
        • 6.3.2.1.1. By Value
      • 6.3.2.2. Market Share & Forecast
        • 6.3.2.2.1. By Device Type
        • 6.3.2.2.2. By Voltage Range
        • 6.3.2.2.3. By Application
        • 6.3.2.2.4. By End User
    • 6.3.3. Mexico GaN Power Devices Market Outlook
      • 6.3.3.1. Market Size & Forecast
        • 6.3.3.1.1. By Value
      • 6.3.3.2. Market Share & Forecast
        • 6.3.3.2.1. By Device Type
        • 6.3.3.2.2. By Voltage Range
        • 6.3.3.2.3. By Application
        • 6.3.3.2.4. By End User

7. Europe GaN Power Devices Market Outlook

  • 7.1. Market Size & Forecast
    • 7.1.1. By Value
  • 7.2. Market Share & Forecast
    • 7.2.1. By Device Type
    • 7.2.2. By Voltage Range
    • 7.2.3. By Application
    • 7.2.4. By End User
    • 7.2.5. By Country
  • 7.3. Europe: Country Analysis
    • 7.3.1. Germany GaN Power Devices Market Outlook
      • 7.3.1.1. Market Size & Forecast
        • 7.3.1.1.1. By Value
      • 7.3.1.2. Market Share & Forecast
        • 7.3.1.2.1. By Device Type
        • 7.3.1.2.2. By Voltage Range
        • 7.3.1.2.3. By Application
        • 7.3.1.2.4. By End User
    • 7.3.2. France GaN Power Devices Market Outlook
      • 7.3.2.1. Market Size & Forecast
        • 7.3.2.1.1. By Value
      • 7.3.2.2. Market Share & Forecast
        • 7.3.2.2.1. By Device Type
        • 7.3.2.2.2. By Voltage Range
        • 7.3.2.2.3. By Application
        • 7.3.2.2.4. By End User
    • 7.3.3. United Kingdom GaN Power Devices Market Outlook
      • 7.3.3.1. Market Size & Forecast
        • 7.3.3.1.1. By Value
      • 7.3.3.2. Market Share & Forecast
        • 7.3.3.2.1. By Device Type
        • 7.3.3.2.2. By Voltage Range
        • 7.3.3.2.3. By Application
        • 7.3.3.2.4. By End User
    • 7.3.4. Italy GaN Power Devices Market Outlook
      • 7.3.4.1. Market Size & Forecast
        • 7.3.4.1.1. By Value
      • 7.3.4.2. Market Share & Forecast
        • 7.3.4.2.1. By Device Type
        • 7.3.4.2.2. By Voltage Range
        • 7.3.4.2.3. By Application
        • 7.3.4.2.4. By End User
    • 7.3.5. Spain GaN Power Devices Market Outlook
      • 7.3.5.1. Market Size & Forecast
        • 7.3.5.1.1. By Value
      • 7.3.5.2. Market Share & Forecast
        • 7.3.5.2.1. By Device Type
        • 7.3.5.2.2. By Voltage Range
        • 7.3.5.2.3. By Application
        • 7.3.5.2.4. By End User

8. Asia Pacific GaN Power Devices Market Outlook

  • 8.1. Market Size & Forecast
    • 8.1.1. By Value
  • 8.2. Market Share & Forecast
    • 8.2.1. By Device Type
    • 8.2.2. By Voltage Range
    • 8.2.3. By Application
    • 8.2.4. By End User
    • 8.2.5. By Country
  • 8.3. Asia Pacific: Country Analysis
    • 8.3.1. China GaN Power Devices Market Outlook
      • 8.3.1.1. Market Size & Forecast
        • 8.3.1.1.1. By Value
      • 8.3.1.2. Market Share & Forecast
        • 8.3.1.2.1. By Device Type
        • 8.3.1.2.2. By Voltage Range
        • 8.3.1.2.3. By Application
        • 8.3.1.2.4. By End User
    • 8.3.2. India GaN Power Devices Market Outlook
      • 8.3.2.1. Market Size & Forecast
        • 8.3.2.1.1. By Value
      • 8.3.2.2. Market Share & Forecast
        • 8.3.2.2.1. By Device Type
        • 8.3.2.2.2. By Voltage Range
        • 8.3.2.2.3. By Application
        • 8.3.2.2.4. By End User
    • 8.3.3. Japan GaN Power Devices Market Outlook
      • 8.3.3.1. Market Size & Forecast
        • 8.3.3.1.1. By Value
      • 8.3.3.2. Market Share & Forecast
        • 8.3.3.2.1. By Device Type
        • 8.3.3.2.2. By Voltage Range
        • 8.3.3.2.3. By Application
        • 8.3.3.2.4. By End User
    • 8.3.4. South Korea GaN Power Devices Market Outlook
      • 8.3.4.1. Market Size & Forecast
        • 8.3.4.1.1. By Value
      • 8.3.4.2. Market Share & Forecast
        • 8.3.4.2.1. By Device Type
        • 8.3.4.2.2. By Voltage Range
        • 8.3.4.2.3. By Application
        • 8.3.4.2.4. By End User
    • 8.3.5. Australia GaN Power Devices Market Outlook
      • 8.3.5.1. Market Size & Forecast
        • 8.3.5.1.1. By Value
      • 8.3.5.2. Market Share & Forecast
        • 8.3.5.2.1. By Device Type
        • 8.3.5.2.2. By Voltage Range
        • 8.3.5.2.3. By Application
        • 8.3.5.2.4. By End User

9. Middle East & Africa GaN Power Devices Market Outlook

  • 9.1. Market Size & Forecast
    • 9.1.1. By Value
  • 9.2. Market Share & Forecast
    • 9.2.1. By Device Type
    • 9.2.2. By Voltage Range
    • 9.2.3. By Application
    • 9.2.4. By End User
    • 9.2.5. By Country
  • 9.3. Middle East & Africa: Country Analysis
    • 9.3.1. Saudi Arabia GaN Power Devices Market Outlook
      • 9.3.1.1. Market Size & Forecast
        • 9.3.1.1.1. By Value
      • 9.3.1.2. Market Share & Forecast
        • 9.3.1.2.1. By Device Type
        • 9.3.1.2.2. By Voltage Range
        • 9.3.1.2.3. By Application
        • 9.3.1.2.4. By End User
    • 9.3.2. UAE GaN Power Devices Market Outlook
      • 9.3.2.1. Market Size & Forecast
        • 9.3.2.1.1. By Value
      • 9.3.2.2. Market Share & Forecast
        • 9.3.2.2.1. By Device Type
        • 9.3.2.2.2. By Voltage Range
        • 9.3.2.2.3. By Application
        • 9.3.2.2.4. By End User
    • 9.3.3. South Africa GaN Power Devices Market Outlook
      • 9.3.3.1. Market Size & Forecast
        • 9.3.3.1.1. By Value
      • 9.3.3.2. Market Share & Forecast
        • 9.3.3.2.1. By Device Type
        • 9.3.3.2.2. By Voltage Range
        • 9.3.3.2.3. By Application
        • 9.3.3.2.4. By End User

10. South America GaN Power Devices Market Outlook

  • 10.1. Market Size & Forecast
    • 10.1.1. By Value
  • 10.2. Market Share & Forecast
    • 10.2.1. By Device Type
    • 10.2.2. By Voltage Range
    • 10.2.3. By Application
    • 10.2.4. By End User
    • 10.2.5. By Country
  • 10.3. South America: Country Analysis
    • 10.3.1. Brazil GaN Power Devices Market Outlook
      • 10.3.1.1. Market Size & Forecast
        • 10.3.1.1.1. By Value
      • 10.3.1.2. Market Share & Forecast
        • 10.3.1.2.1. By Device Type
        • 10.3.1.2.2. By Voltage Range
        • 10.3.1.2.3. By Application
        • 10.3.1.2.4. By End User
    • 10.3.2. Colombia GaN Power Devices Market Outlook
      • 10.3.2.1. Market Size & Forecast
        • 10.3.2.1.1. By Value
      • 10.3.2.2. Market Share & Forecast
        • 10.3.2.2.1. By Device Type
        • 10.3.2.2.2. By Voltage Range
        • 10.3.2.2.3. By Application
        • 10.3.2.2.4. By End User
    • 10.3.3. Argentina GaN Power Devices Market Outlook
      • 10.3.3.1. Market Size & Forecast
        • 10.3.3.1.1. By Value
      • 10.3.3.2. Market Share & Forecast
        • 10.3.3.2.1. By Device Type
        • 10.3.3.2.2. By Voltage Range
        • 10.3.3.2.3. By Application
        • 10.3.3.2.4. By End User

11. Market Dynamics

  • 11.1. Drivers
  • 11.2. Challenges

12. Market Trends & Developments

  • 12.1. Merger & Acquisition (If Any)
  • 12.2. Product Launches (If Any)
  • 12.3. Recent Developments

13. Global GaN Power Devices Market: SWOT Analysis

14. Porter's Five Forces Analysis

  • 14.1. Competition in the Industry
  • 14.2. Potential of New Entrants
  • 14.3. Power of Suppliers
  • 14.4. Power of Customers
  • 14.5. Threat of Substitute Products

15. Competitive Landscape

  • 15.1. Efficient Power Conversion Corporation
    • 15.1.1. Business Overview
    • 15.1.2. Products & Services
    • 15.1.3. Recent Developments
    • 15.1.4. Key Personnel
    • 15.1.5. SWOT Analysis
  • 15.2. NXP Semiconductors
  • 15.3. GaN Systems
  • 15.4. Wolfspeed Inc.
  • 15.5. Infineon Technologies AG
  • 15.6. EPISTAR Corporation
  • 15.7. Rohm Co. Ltd.
  • 15.8. ON Semiconductor Corporation
  • 15.9. Qorvo Inc.
  • 15.10. MACOM Technology Solutions Holdings Inc.

16. Strategic Recommendations

17. About Us & Disclaimer

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